BSS138BKS,115

Overview

The Nexperia BSS138BKS is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology within a SOT363 (SC-88) plastic surface-mounted package. It features a drain-source voltage of 60 V and a continuous drain current of 320 mA per transistor at 25 °C. The device exhibits a typical drain-source on-state resistance of 1.6 Ω at VGS = 10 V and ID = 320 mA. Gate-source voltage limits are ±20 V, with a threshold voltage typically ranging from 0.48 V to 1.1 V. Total power dissipation reaches 445 mW per device at 25 °C ambient temperature.

Feature Summary

• Logic-level compatible operation for direct interface with standard logic outputs
• Very fast switching characteristics enabled by advanced Trench MOSFET technology
• Integrated electrostatic discharge protection rated up to 1.5 kV under Human Body Model conditions
• Qualified according to AEC-Q101 standards for automotive reliability requirements

Applications

• Relay driver circuits
• High-speed line drivers
• Low-side load switches
• General switching circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging configuration and reel specifications. Ensure the component matches the required automotive qualification status if deployed in vehicle systems. Cross-reference the marking code LG% with manufacturing site codes to validate authenticity and traceability during incoming inspection processes.

Selection Notes

Select this component when space-constrained designs require dual N-channel functionality in a minimal footprint. The low threshold voltage supports efficient drive from 1.8 V or 3.3 V logic families. Verify thermal management capabilities against the junction-to-ambient resistance values provided in the datasheet for the intended PCB copper area and duty cycle constraints.

Part Context

This device belongs to the BSS138 family of small-signal MOSFETs produced by Nexperia. It represents the dual-channel variant housed in the SOT363 package, distinct from single-channel counterparts like the BSS138BK found in SOT23 packages. The series utilizes trench technology to optimize switching speed and on-resistance performance relative to planar alternatives.

Replacement Considerations

NX138BKS

FAQ

What is the maximum electrostatic discharge rating for the BSS138BKS?

The device provides electrostatic discharge protection up to 1.5 kV when tested according to the Human Body Model (HBM) standard.

How does the gate-source threshold voltage vary with temperature?

The gate-source threshold voltage decreases as the junction temperature increases, exhibiting negative temperature coefficient behavior typical of MOSFETs.

Is the BSS138BKS suitable for automotive applications?

Yes, the component is qualified in accordance with the AEC-Q101 stress test qualification standard for discrete semiconductors.