BSS138BKW/DG/B2X

Overview

The BSS138BKW/DG/B2X is a single N-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia. It utilizes Trench MOSFET technology and is housed in the SOT-323 (SC-70) surface-mounted device plastic package. The component features a drain-source breakdown voltage of 60 V and a continuous drain current rating of 265 mA. Key electrical parameters include a maximum on-resistance of 3.5 Ohms at a gate-source voltage of 10 V, a gate-source threshold voltage maximum of 500 mV, and a total gate charge of 490 pC. It operates within a temperature range of -55 °C to +150 °C with a power dissipation capacity of 400 mW.

Feature Summary

• Employs Trench MOSFET technology for very fast switching performance.
• Features a low threshold voltage suitable for logic-level compatibility.
• Includes ElectroStatic Discharge (ESD) protection exceeding 2 kV HBM.

Applications

• Relay driver circuits
• High-speed line drivers
• Low-side load switches
• General switching circuits

Procurement Notes

Verify the specific suffix configuration against official Nexperia documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the requested part number matches the exact pinout and marking requirements for your PCB layout. Cross-reference the ordering code with authorized distributors to validate authenticity and traceability before finalizing procurement orders.

Selection Notes

Select this component when a small form factor N-channel MOSFET is required for low-voltage signal switching or level shifting applications. The SOT-323 package is ideal for space-constrained designs. Ensure the circuit design accounts for the 3.5 Ohm on-resistance and 265 mA current limit to maintain safe operating conditions within the specified thermal envelope.

Part Context

This device belongs to Nexperia's portfolio of small signal MOSFETs designed for general-purpose switching. It is part of the BSS138 series, which offers various package options including SOT-23 and SC-70. The product is widely used in consumer electronics and industrial control systems where compact size and reliable switching characteristics are essential for efficient circuit operation.

Replacement Considerations

Direct substitutes include other single N-channel MOSFETs in the SOT-323 package with comparable 60 V ratings. Verify pinout compatibility and electrical parameter equivalence, specifically Rds(on) and Vgs(th), before implementing any alternative components in existing designs.

FAQ

What is the ESD protection rating for this component?

The BSS138BKW/DG/B2X provides Electrostatic Discharge (ESD) protection greater than 2 kV according to the Human Body Model (HBM).

Is this MOSFET logic-level compatible?

Yes, the device features a low threshold voltage, making it logic-level compatible for direct interface with standard logic outputs.