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Product Detailed Parameters
- Description：MOSFET 2N-CH 50V 0.2A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：50V
- Current - Continuous Drain (Id) @ 25°C：200mA
- Rds On (Max) @ Id, Vgs：3.5Ohm @ 220mA, 10V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 10V
- Power - Max：200mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The BSS138DW-7-F is a dual N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 50 V and a continuous drain current of 200 mA at +25°C. The device exhibits a maximum static drain-source on-resistance of 3.5 Ω at VGS = 10V and ID = 0.22A, with a typical value of 1.4 Ω. Gate threshold voltage ranges from 0.5 V to 1.5 V at ID = 250μA. Total power dissipation is rated at 200 mW, supported by a thermal resistance junction-to-ambient of 625 °C/W. Operating and storage temperatures span from -55°C to +150°C.
Feature Summary
- Dual configuration providing two independent N-channel MOSFETs within a single package for space-constrained designs.
- Optimized for high efficiency power management applications through minimized on-state resistance while maintaining superior switching performance.
- Compliant with JEDEC standards for high reliability and fully RoHS compliant without purposely added lead.
Applications
- Load Switch
- High efficiency power management
Procurement Notes
Verify the specific ordering suffix '-7-F' corresponds to the standard tape and reel packaging containing 3000 units per reel. Confirm that the component meets the required environmental specifications, specifically the halogen-free and antimony-free 'Green' device definition which limits bromine and chlorine content below specified thresholds.
Selection Notes
Select this component when a dual N-channel topology is required in an SOT363 footprint. Ensure the application operates within the 200 mA continuous drain current limit and respects the 200 mW total power dissipation rating. Verify that the gate drive voltage is sufficient to achieve the desired low on-resistance characteristics under load conditions.
Part Context
This part belongs to the BSS138 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes the SOT363 case style, which houses two isolated channels. The product is designed to minimize on-state resistance while maintaining fast switching speeds suitable for modern electronic circuits.
Replacement Considerations
The automotive-compliant alternative is the BSS138DWQ. This variant is qualified to AEC-Q101/100/200 standards and is manufactured in IATF 16949 certified facilities. It requires separate datasheet review for specific automotive qualification details.
