BSS138DW-7

BSS138DW-7

$0.67
  • Description:MOSFET 2N-CH 50V 0.2A SOT363
  • Series:-

SKU:40d26c989d8e Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 50V 0.2A SOT363
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):50V
  • Current - Continuous Drain (Id) @ 25°C:200mA
  • Rds On (Max) @ Id, Vgs:3.5Ohm @ 220mA, 10V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:50pF @ 10V
  • Power - Max:200mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SOT-363
  • Grade:-
  • Qualification:-

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BSS138DW-7

Overview

The BSS138DW-7 is a dual N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 50V and a continuous drain current of 200mA at +25°C. The device has a maximum static drain-source on-resistance of 3.5Ω at VGS = 10V and ID = 0.22A, with a typical value of 1.4Ω. Gate-source voltage is rated at ±20V, and the gate threshold voltage ranges from 0.5V to 1.5V. Total power dissipation is 200mW, with a thermal resistance junction-to-ambient of 625°C/W. Operating temperature spans -55°C to +150°C.

Feature Summary

  • Dual N-channel configuration in a compact SOT363 package
  • Low on-resistance for high efficiency power management
  • Fast switching speed with low input capacitance
  • Totally lead-free and fully RoHS compliant

Applications

  • Load switch applications
  • High efficiency power management circuits

Procurement Notes

Verify the specific ordering suffix against official documentation, as variations exist within the product family. Confirm compliance requirements such as AEC-Q standards if automotive reliability is necessary, noting that standard versions differ from qualified automotive parts. Ensure the selected packaging matches production volume needs.

Selection Notes

Select this component for dual-channel logic-level switching where low on-resistance and fast switching are required. Verify that the 200mA continuous current rating meets circuit demands. Consider the 3.5Ω maximum on-resistance for power loss calculations. Check thermal constraints given the 625°C/W junction-to-ambient resistance.

Part Context

This part belongs to the BSS138 series of MOSFETs from Diodes Incorporated. It is specifically designed to minimize on-state resistance while maintaining superior switching performance. The device is intended for general-purpose switching applications requiring dual N-channel functionality in a small surface-mount package.

Replacement Considerations

Direct replacement options include the BSS138DWQ-7 for automotive-grade requirements. Other variants like BSS138DW-7-F share identical electrical characteristics but may differ in packaging specifications.

BSS138DW-7BSS138DW-7
$0.67
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