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The BSS138DW-7 is a dual N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 50V and a continuous drain current of 200mA at +25°C. The device has a maximum static drain-source on-resistance of 3.5Ω at VGS = 10V and ID = 0.22A, with a typical value of 1.4Ω. Gate-source voltage is rated at ±20V, and the gate threshold voltage ranges from 0.5V to 1.5V. Total power dissipation is 200mW, with a thermal resistance junction-to-ambient of 625°C/W. Operating temperature spans -55°C to +150°C.
Verify the specific ordering suffix against official documentation, as variations exist within the product family. Confirm compliance requirements such as AEC-Q standards if automotive reliability is necessary, noting that standard versions differ from qualified automotive parts. Ensure the selected packaging matches production volume needs.
Select this component for dual-channel logic-level switching where low on-resistance and fast switching are required. Verify that the 200mA continuous current rating meets circuit demands. Consider the 3.5Ω maximum on-resistance for power loss calculations. Check thermal constraints given the 625°C/W junction-to-ambient resistance.
This part belongs to the BSS138 series of MOSFETs from Diodes Incorporated. It is specifically designed to minimize on-state resistance while maintaining superior switching performance. The device is intended for general-purpose switching applications requiring dual N-channel functionality in a small surface-mount package.
Direct replacement options include the BSS138DWQ-7 for automotive-grade requirements. Other variants like BSS138DW-7-F share identical electrical characteristics but may differ in packaging specifications.