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Product Detailed Parameters
- Description：N Channel MOSFET,50V,SOT-363
- Series：*
- Mfr：Bruckewell
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The BSS138DW is a dual N-channel logic level enhancement mode field effect transistor housed in a SOT-363 package. It features a drain-source voltage of 50 V and continuous drain current of 200 mA. The device exhibits a maximum on-state resistance of 3.5 Ω at VGS=10 V and a gate threshold voltage ranging from 0.5 V to 1.6 V. Electrical characteristics include an input capacitance of 50 pF, forward transfer admittance of 100 mS, and switching delay times of 20 ns for both turn-on and turn-off operations.
Feature Summary
- Dual N-channel configuration within a compact SOT-363 surface mount package
- Logic level enhancement mode operation with low gate threshold voltage
- Fast switching speed supported by low input capacitance
- Low input and output leakage currents
Applications
- Load switching applications
- High efficiency power management circuits
- General purpose switching applications requiring logic level drive
Procurement Notes
Verify the specific ordering suffix when purchasing. A blank suffix indicates a lead-free package, while the letter 'G' denotes a halogen-free variant. Confirm that the component matches the SOT-363 footprint dimensions provided in the datasheet to ensure compatibility with existing PCB layouts and soldering profiles.
Selection Notes
Select this component for designs requiring dual N-channel MOSFETs in a minimal footprint. The 50 V rating and 200 mA current capacity suit low-power signal switching tasks. Ensure the driving circuit can provide sufficient gate voltage to achieve the specified low on-resistance values during operation.
Part Context
This part belongs to the family of small-signal N-channel MOSFETs designed for general-purpose switching. It utilizes silicon technology and is qualified for high-reliability applications. The device is manufactured using processes compliant with environmental standards, offering options for lead-free and halogen-free configurations.
Replacement Considerations
Direct substitutes must match the dual N-channel topology and SOT-363 package. Verify that alternative components meet or exceed the 50 V breakdown voltage and 200 mA current ratings. Check pinout compatibility to prevent circuit damage during installation.
