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The BSS138IXTSA1 is an N-channel enhancement mode logic level small-signal MOSFET in a PG-SOT23-3 package. It features a drain-source breakdown voltage of 60 V and a continuous drain current of 0.23 A at 25 °C. The device has a maximum on-state resistance of 3.5 Ω at 4.5 V gate drive. It includes a fast reverse diode with a dV/dt rating of 6 kV/μs. Qualified for industrial applications per JEDEC standards, it operates between -55 °C and 150 °C.
Verify the component marking 'Kl' against the latest datasheet revision 2.3 to confirm authenticity. Ensure the ordering suffix XTSA1 matches the required tape and reel packaging specifications. Cross-reference the part number with official Infineon documentation to validate RoHS compliance and lead-free plating status before finalizing procurement orders.
Select this component when a compact N-channel switch with 60 V blocking capability is required. It is suitable for applications needing logic-level control with minimal gate charge. Consider the thermal resistance characteristics if operating near the upper temperature limits or under pulsed conditions requiring safe area analysis.
This part belongs to the BSS138I series of small-signal transistors designed for industrial environments. It utilizes standard surface-mount technology compatible with automated assembly processes. The device represents a specific variant within Infineon's portfolio of high-reliability discrete semiconductors.
Consult official cross-reference lists for verified substitutes. Generic replacements may differ in threshold voltage or thermal performance.
The device is classified as Class 0 (<250V) according to JESD22-A114 (HBM).
The reverse diode supports a dV/dt rating of 6 kV/μs.