BSS138K-13

$0.12

Description：MOSFET N-CH 50V 310MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0a085264ea19 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 50V 310MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.95 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：23.2 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：380mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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BSS138K-13

Overview

The BSS138K-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (Vdss) of 50 V and a continuous drain current (Id) of 0.31 A at +25°C ambient temperature. The device exhibits a maximum static drain-source on-resistance (Rds(on)) of 3.5 Ω at Vgs = 10 V and Id = 0.22 A. Total power dissipation is rated at 0.38 W under standard conditions, with a junction-to-ambient thermal resistance of 338 °C/W. Operating temperatures range from -55°C to +150°C.

Feature Summary

Designed for high-efficiency power-management applications with minimized on-state resistance.
Features an ESD protected gate structure for enhanced reliability.
Provides fast switching speed capabilities alongside low input capacitance.

Applications

Load switches
High-efficiency power-management circuits

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm compliance requirements such as RoHS 3 and halogen-free status against project specifications. Ensure the SOT-23 package dimensions align with the target PCB footprint layout constraints.

Selection Notes

Select this component when a 50 V N-channel MOSFET with low Rds(on) is required for load switching. Evaluate the 0.31 A continuous current rating against peak load demands. Consider the 338 °C/W thermal resistance for heat dissipation in free-air environments without copper plane assistance.

Part Context

This part belongs to the BSS138 family of small-signal MOSFETs produced by Diodes Incorporated. It utilizes a molded plastic SOT-23 package with matte tin annealed terminals over a copper leadframe. The device is classified as a 'Green' product, being fully lead-free and compliant with EU directives.

Replacement Considerations

Direct substitutes include BSS138W-7-F from Diodes Incorporated. Other compatible options are BSS138TA from Diodes Incorporated and BSS138BKT116 from Rohm Semiconductor.