BSS138K-7

$0.14

Description：MOSFET N-CH 50V SOT23 T&R 3K
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9243f5cbb5ce Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 50V SOT23 T&R 3K
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.95 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：23.2 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：380mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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BSS138K-7

Overview

The BSS138K-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 50V and a continuous drain current of 0.31A at +25°C. The device exhibits a maximum on-resistance of 3.5Ω at VGS=10V and ID=0.22A, with a gate threshold voltage ranging from 0.5V to 1.5V. Total power dissipation reaches 0.54W on high-coverage copper PCBs. Operating temperatures span from -55°C to +150°C.

Feature Summary

Designed for low on-state resistance while maintaining superior switching performance.
Features an ESD protected gate structure.
Totally lead-free and fully RoHS compliant.
Halogen and antimony free green device.

Applications

Load switches
High-efficiency power-management applications

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets the required environmental standards, specifically RoHS compliance and halogen/antimony-free status, as defined by the manufacturer's quality definitions. Ensure the selected package matches the SOT23 footprint requirements for your design.

Selection Notes

Select this component when a single N-channel MOSFET in an SOT23 package is required for load switching or power management. Consider the 0.31A continuous current limit and 3.5Ω maximum on-resistance for efficiency calculations. Evaluate thermal constraints based on the 0.54W power dissipation rating under appropriate PCB copper coverage conditions.

Part Context

This part belongs to the BSS138 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The 'K' designation indicates the SOT23 surface-mount package, while the '-7' suffix specifies the standard 3,000-unit tape and reel carrier quantity for automated assembly processes.