BSS138K

$0.25

Description：MOSFET N-CH 50V 220MA SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:aa31fdd57e22 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 50V 220MA SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：220mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 2.5V
Rds On (Max) @ Id, Vgs：1.6Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：2.4 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：58 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：350mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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BSS138K

Overview

The BSS138K is an N-Channel Logic Level Enhancement Mode Field Effect Transistor manufactured by onsemi. It features a Drain-Source Voltage (VDSS) of 50 V and a continuous Drain Current (ID) of 0.22 A. The device operates within a junction temperature range of -55°C to +150°C with a total power dissipation of 350 mW. Key electrical parameters include a maximum static Drain-Source On-Resistance (RDS(on)) of 2.5 Ω at VGS = 1.8 V, a Gate Threshold Voltage (VGS(th)) ranging from 0.6 V to 1.2 V, and a typical Total Gate Charge (Qg) of 2.4 nC. The component utilizes a SOT-23-3 surface mount package.

Feature Summary

Logic level enhancement mode operation enabling low gate threshold voltage for efficient drive
Low on-resistance characteristics optimized for minimal conduction losses
Fast switching speed supported by low input capacitance and gate charge
Robust electrostatic discharge protection rated at 2000 V under HBM and CDM standards

Applications

Level shifting in digital communication interfaces
Load switching for low-power circuits
Driver stages for logic-controlled loads

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details such as tape and reel specifications. Ensure compliance requirements including RoHS status and lead-free designation are validated prior to integration. Cross-reference the manufacturer part number with authorized distribution channels to guarantee authenticity and traceability of the semiconductor components.

Selection Notes

Select this component when a small surface-mount footprint is required alongside logic-level gate drive compatibility. Evaluate the thermal resistance and power dissipation limits relative to the expected ambient operating conditions. Confirm that the drain-source breakdown voltage and continuous current ratings exceed the maximum circuit demands to ensure reliable long-term performance.

Part Context

This device belongs to the BSS138K series of N-channel MOSFETs designed for general-purpose switching applications. Manufactured using silicon technology, it offers a compact SOT-23-3 package suitable for automated surface mount assembly. The product line emphasizes low input leakage and fast switching capabilities for modern electronic designs.