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Product Detailed Parameters
- Description：MOSFET N-CH 50V 200MA SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：3.5Ohm @ 200mA, 5V
- Vgs(th) (Max) @ Id：1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：225mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3 (TO-236)
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS138LT1G is an N-channel enhancement mode MOSFET from the BSS138L series, manufactured by onsemi. It features a maximum drain-to-source voltage of 50 V and a continuous drain current of 200 mA at 25°C. The device utilizes a miniature SOT-23 surface-mount package with three pins. Key electrical parameters include a static drain-to-source on-resistance of 3.5 Ω at VGS = 5.0 V and a gate-source threshold voltage ranging from 0.85 V to 1.5 V. Total power dissipation is rated at 225 mW, with an operating temperature range spanning -55°C to +150°C.
Feature Summary
- Low threshold voltage suitable for low voltage applications
- Miniature SOT-23 surface mount package for board space savings
- High electrostatic discharge protection capabilities
- Automotive qualified with unique site and control change requirements
Applications
- DC-DC converters
- Power management in portable products
- Battery-powered devices such as computers and printers
- PCMCIA cards
- Cellular and cordless telephones
Procurement Notes
Verify the specific ordering suffix to confirm packaging quantity and type, as variations exist within the BSS138L family. Ensure the component meets RoHS compliance standards if required by your design specifications. Confirm that the AEC-Q101 qualification aligns with automotive application requirements. Check for any recent product change notices regarding material or assembly modifications before finalizing procurement.
Selection Notes
Select this component for circuits requiring low gate drive voltage due to its enhanced threshold characteristics. The SOT-23 package is appropriate for space-constrained designs. Consider the thermal resistance when determining heat dissipation needs in high ambient temperatures. Verify that the 200 mA continuous current rating suffices for the intended load conditions without exceeding power dissipation limits.
Part Context
This part belongs to the BSS138L series of N-channel power MOSFETs. The BVSS prefix indicates variants designed for automotive and other applications requiring unique site and control change requirements. These devices are Pb-free, halogen-free, and BFR-free, adhering to environmental compliance standards while maintaining performance in standard small-signal switching applications.
Replacement Considerations
Direct substitutes within the same series include BSS138LT7G and BSS138LT3G, which share identical electrical characteristics but differ in tape and reel packaging quantities. Automotive-specific equivalents may carry the BVSS138LT1G designation.
