BSS138N E7854

Description：MOSFET N-CH 60V 230MA SOT23-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:8b8dc7070ba3 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 230MA SOT23-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.5Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id：1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：41 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：360mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT23
Package / Case：TO-236-3, SC-59, SOT-23-3

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BSS138N E7854

Overview

The BSS138N is an N-channel SIPMOS small-signal MOSFET in a PG-SOT-23 package. It features a drain-source voltage of 60 V and a continuous drain current of 0.23 A at 25°C, with a maximum on-state resistance of 3.5 Ω at VGS=10V. The device supports a pulsed drain current of 0.92 A and has a power dissipation of 0.36 W. It includes a reverse diode rated for dv/dt of 6 kV/µs and operates within a temperature range of -55°C to 150°C.

Feature Summary

Logic level enhancement mode operation
dv/dt rated capability
AEC Q101 qualified

Applications

General purpose switching
Level shifting
Load switching

Procurement Notes

Verify the specific ordering suffix (H6327 or H6433) against the required tape and reel quantity. Confirm RoHS compliance and Pb-free lead plating status. Ensure the component meets the specified operating temperature range and thermal resistance requirements for the intended application footprint.

Selection Notes

Select this component for low-voltage, low-current applications requiring logic-level drive compatibility. Consider the 3.5 Ω maximum RDS(on) at VGS=10V for efficiency calculations. Evaluate the 60 V breakdown voltage and 0.23 A continuous current limits against peak load demands.

Part Context

This part belongs to Infineon's SIPMOS small-signal transistor family. It utilizes standard silicon MOSFET technology optimized for general-purpose switching tasks. The PG-SOT-23 package provides a compact form factor suitable for space-constrained designs.

Replacement Considerations

Check pinout compatibility and electrical parameter overlap with other N-channel SOT-23 MOSFETs. Verify that substitute parts meet the same AEC Q101 qualification if automotive reliability is required.