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Product Detailed Parameters
- Description：MOSFET N-CH 60V 230MA SOT23-3
- Series：SIPMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：230mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.5Ohm @ 230mA, 10V
- Vgs(th) (Max) @ Id：1.4V @ 26µA
- Gate Charge (Qg) (Max) @ Vgs：1.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：41 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS138NH6433XTMA1 is an N-channel enhancement-mode MOSFET from Infineon Technologies, packaged in a PG-SOT-23 (SOT-23-3) surface-mount housing. It features a drain-source breakdown voltage of 60 V and a continuous drain current of 0.23 A at 25 °C. The device exhibits a maximum on-state resistance of 3.5 Ω at VGS=10 V and a total gate charge of 1.4 nC. Power dissipation is rated at 0.36 W, with an operating temperature range spanning -55 °C to +150 °C. It meets AEC-Q101 qualification standards.
Feature Summary
- Logic-level operation suitable for direct interface with standard logic circuits
- dv/dt rated capability for high-speed switching applications
- Halogen-free construction compliant with IEC61249-2-21 standards
Applications
- Low-side switching in automotive electronic modules
- General-purpose signal switching in consumer electronics
- Level shifting between different logic voltage domains
Procurement Notes
Verify the specific ordering suffix H6433 against official Infineon documentation to confirm the 10,000-unit tape and reel packaging configuration. Ensure that procurement specifications explicitly require AEC-Q101 automotive qualification and Pb-free lead plating to match the component's certified attributes.
Selection Notes
Select this component when a small-signal N-channel MOSFET with low gate charge and robust dv/dt performance is required. The PG-SOT-23 package provides a compact footprint for space-constrained designs. Consider the 60 V rating and 0.23 A current limit to ensure adequate headroom for the intended load conditions.
Part Context
This part belongs to the BSS138N SIPMOS® small-signal transistor family manufactured by Infineon Technologies. It utilizes silicon technology optimized for low-power switching tasks. The product line includes various packaging options, with the H6433 suffix specifically denoting the standard 10,000-unit reel format for automated assembly processes.
Replacement Considerations
Consult official Infineon cross-reference lists for verified substitutes. Generic replacements must match the N-channel polarity, 60 V minimum breakdown voltage, SOT-23-3 package dimensions, and AEC-Q101 qualification status to ensure functional compatibility.
