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The BSS138TA-79 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source breakdown voltage of 50 V and a continuous drain current of 200 mA. The device exhibits a maximum on-resistance of 3.5 Ohms at a gate-source voltage of 5 V. It operates within a temperature range of -55°C to +150°C with a power dissipation rating of 350 mW. Packaged in an SOT-23-3 surface-mount case, it utilizes silicon technology for reliable performance in low-power switching applications.
Verify the specific suffix designation against official manufacturer documentation to confirm exact electrical tolerances and packaging specifications. Ensure that the component meets all required environmental compliance standards for the intended deployment environment before finalizing procurement decisions.
Select this component when a single N-channel switch is required with moderate voltage handling capabilities. Consider the thermal constraints imposed by the 350 mW power dissipation limit and ensure the application current remains below the 200 mA continuous drain current rating for safe operation.
This part belongs to the BSS138 series of small-signal MOSFETs from Diodes Incorporated. The series is widely utilized in general-purpose switching applications where space efficiency and low cost are primary design drivers. The TA variant specifically denotes the tape and reel packaging format suitable for automated assembly processes.
Publicly confirmed substitute part numbers for this specific model were not identified in the provided source material.