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Product Detailed Parameters
- Description：MOSFET N-CH 60V 280MA SOT323-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：280mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.5Ohm @ 220mA, 10V
- Vgs(th) (Max) @ Id：1.4V @ 26µA
- Gate Charge (Qg) (Max) @ Vgs：1.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：43 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT323
- Package / Case：SC-70, SOT-323
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Overview
The BSS138W E6433 is an N-channel small signal MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a SOT-323-3 surface-mount package. The device features a drain-source breakdown voltage of 60 V and a continuous drain current of 280 mA at 25°C. Key electrical parameters include a maximum on-resistance of 3500 mΩ, a gate-source voltage range of -20 V to +20 V, and a typical gate charge of 1 nC. It operates within a temperature range of -55°C to +150°C with a power dissipation of 500 mW.
Feature Summary
- N-channel enhancement mode construction for standard switching applications
- Automotive qualification compliant with AEC-Q100 standards
- Small-signal design optimized for low power consumption
Applications
- Level shifting circuits
- Load switches
- General-purpose switching
Procurement Notes
Verify the specific suffix E6433 against official Infineon documentation to confirm exact tape-and-reel specifications and marking codes. Ensure compatibility with SOT-323 footprint requirements during PCB layout. Confirm RoHS compliance status through the manufacturer's latest product status reports before finalizing procurement plans.
Selection Notes
Select this component when a compact N-channel MOSFET with 60V rating is required for low-current applications. The SOT-323 package offers space efficiency compared to larger transistor packages. Consider the 3500 mΩ on-resistance limit for thermal management in high-density designs requiring minimal heat dissipation.
Part Context
This part belongs to the BSS138 series of small signal MOSFETs from Infineon. The series is widely used in portable electronics due to its small form factor and reliable performance. The BSS138W variant specifically denotes the SOT-323 packaging configuration, distinguishing it from other pin-compatible variants like the SOT-23 versions.
Replacement Considerations
Consult official cross-reference lists for verified substitutes such as BSS138H or BSS138L if availability is constrained. Ensure any replacement maintains the same SOT-323 footprint and meets the 60V/280mA electrical requirements.
