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Product Detailed Parameters
- Description：MOSFET N-CH 50V 0.22A SOT23-3
- Series：-
- Mfr：Comchip Technology
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3.5Ohm @ 220A, 10V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：200mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The BSS138W-G is a single N-channel enhancement mode MOSFET manufactured by Comchip Technology. It utilizes silicon technology and is housed in an SOT-323-3 surface-mount package. The device features a drain-source breakdown voltage of 50 V and a continuous drain current of 200 mA at ambient temperature. Its maximum on-resistance is 3.5 Ohms, with a gate-source voltage rating of ±20 V and a threshold voltage of 1.2 V. Power dissipation is rated at 200 mW, and it operates within a temperature range of -55°C to +150°C.
Feature Summary
- Single N-channel enhancement mode configuration for standard switching applications
- Compact SOT-323-3 surface-mount package design
- Silicon-based construction for reliable performance
Applications
- Low-side load switching circuits
- General purpose signal switching
- Small current control applications
Procurement Notes
Verify the specific manufacturer designation Comchip Technology against the component marking to ensure authenticity. Confirm that the SOT-323-3 package dimensions match the target PCB footprint requirements. Check RoHS compliance documentation if environmental regulations apply to the final assembly. Ensure the 200 mA current rating meets the operational load demands without exceeding thermal limits.
Selection Notes
Select this component when a compact N-channel MOSFET with 50 V capability is required. The 3.5 Ohm on-resistance suits low-current applications where minimal power loss is not critical. Consider the SOT-323-3 package size constraints during layout. Verify that the 200 mA continuous current rating aligns with the specific circuit load requirements.
Part Context
This part belongs to the BSS138 family of small-signal N-channel MOSFETs. These devices are widely used in portable electronics and general-purpose switching due to their small form factor. The W suffix typically denotes the specific tape-and-reel packaging format offered by the manufacturer.
Replacement Considerations
Direct substitutes include BSS138W-7 from Diodes Incorporated and BSS138W-TP from Micro Commercial Components. Verify pinout compatibility and electrical parameter tolerances before substitution.
