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Product Detailed Parameters
- Description：MOSFET N-CH 60V 280MA SOT323-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：280mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.5Ohm @ 220mA, 10V
- Vgs(th) (Max) @ Id：1.4V @ 26µA
- Gate Charge (Qg) (Max) @ Vgs：1.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：43 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT323
- Package / Case：SC-70, SOT-323
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Overview
The BSS138W L6327 is an N-channel small signal MOSFET manufactured by Infineon Technologies, housed in a SOT-323-3 surface-mount package. It features a drain-source breakdown voltage of 60 V and a continuous drain current of 280 mA at 25°C. The device exhibits a maximum on-resistance of 6000 mΩ at 4.5 V gate drive and a typical gate charge of 1 nC. Operating temperatures range from -55°C to +150°C with a power dissipation rating of 500 mW.
Feature Summary
- N-channel enhancement mode construction for low-side switching applications
- Small-signal design optimized for compact PCB layouts
- Automotive qualification compliant with AEC-Q100 standards
Applications
- Low-side switching in automotive electronic modules
- General-purpose signal level shifting circuits
- Load switching in consumer electronics devices
Procurement Notes
Verify the specific suffix L6327 against official Infineon documentation to confirm tape-and-reel packaging specifications and lot traceability requirements. Ensure the ordering part number matches the exact electrical characteristics and RoHS compliance status defined in the current datasheet revision before finalizing procurement orders.
Selection Notes
Select this component when a compact N-channel switch is required for low-current applications up to 280 mA. The SOT-323-3 package offers space efficiency compared to larger transistor packages. Consider the 6000 mΩ on-resistance limit for thermal management in high-density designs where heat dissipation is constrained.
Part Context
This part belongs to the BSS138 series of small signal MOSFETs designed for general-purpose switching. The W variant specifically denotes the SOT-323-3 physical footprint, distinguishing it from other package options within the same electrical family. It serves as a standard discrete solution for controlling small loads in digital logic interfaces.
Replacement Considerations
Cross-reference with BSS138W H6327 or BSS138WH6433XTMA1 for identical electrical performance and pinout compatibility. Verify that substitute parts maintain the same SOT-323-3 package dimensions and AEC-Q100 automotive qualification if used in regulated environments.
