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Product Detailed Parameters
- Description：MOSFET N-CH 250V 100MA SOT23-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel, Depletion Mode
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：250 V
- Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：0V, 10V
- Rds On (Max) @ Id, Vgs：14Ohm @ 0.1mA, 10V
- Vgs(th) (Max) @ Id：1V @ 56µA
- Gate Charge (Qg) (Max) @ Vgs：3.5 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：76 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS139 E6906 is an N-channel depletion mode MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a SOT-23-3 surface-mount package. The device features a drain-source breakdown voltage of 250 V and a continuous drain current of 100 mA at 25°C. Its typical on-resistance is 7.8 ohms, with a gate-source threshold voltage range of -2.1 V to -1 V. The component operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 360 mW.
Feature Summary
- N-channel depletion mode operation for normally-on functionality
- High drain-source voltage capability suitable for robust switching applications
- Small signal design optimized for low-power control circuits
Applications
- Level shifting in digital logic interfaces
- Load switching for small signal applications
- Pull-up resistor replacement in open-drain circuits
Procurement Notes
Verify the specific ordering suffix E6906 against official Infineon documentation to confirm tape-and-reel packaging details. Confirm current production status as some sources indicate end-of-life or obsolescence for this specific variant. Ensure compatibility with RoHS directives if required for your application. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components.
Selection Notes
Select this component when a normally-on N-channel switch is required. The high 250 V rating distinguishes it from standard 50 V depletion MOSFETs. Verify that the negative threshold voltage aligns with your control logic levels. Consider the 7.8 ohm on-resistance for voltage drop calculations in low-current paths. Ensure the SOT-23-3 package fits your PCB layout constraints.
Part Context
This part belongs to Infineon's small signal MOSFET portfolio. Depletion mode devices are less common than enhancement mode types and serve specific niche roles in analog and digital interfacing. The BSS139 series provides a reliable solution for applications requiring a default conductive state without gate drive power.
Replacement Considerations
Check for parameter-equivalent alternatives such as the BSS139H6906XTSA1 if the exact E6906 suffix is unavailable. Verify pinout compatibility and electrical specifications before substitution. Consult Infineon's selection guides for updated active parts if the E6906 variant is discontinued.
