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Product Detailed Parameters
- Description：MOSFET N-CH 250V 100MA SOT23-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel, Depletion Mode
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：250 V
- Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：0V, 10V
- Rds On (Max) @ Id, Vgs：14Ohm @ 0.1mA, 10V
- Vgs(th) (Max) @ Id：1V @ 56µA
- Gate Charge (Qg) (Max) @ Vgs：3.5 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：76 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS139L6327HTSA1 is an N-channel depletion mode MOSFET from Infineon Technologies, housed in a PG-SOT23 surface-mount package. It features a drain-source breakdown voltage of 250 V and a continuous drain current of 100 mA at 25°C ambient temperature. The device dissipates up to 360 mW of power and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Depletion mode operation ensures the device remains conductive when gate-to-source voltage is zero, functioning as a normally-on switch.
Applications
- High-frequency switching circuits
- Compact electronic designs requiring small form factors
- Constant current source implementations
Procurement Notes
Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific L6327 tape-and-reel packaging variant matches your assembly requirements. Ensure compliance with RoHS directives and AEC-Q100 automotive qualification standards if applicable to your design environment.
Selection Notes
Select this component for applications necessitating a normally-on N-channel configuration with high voltage tolerance. The SOT-23 package suits space-constrained layouts. Evaluate thermal management capabilities against the 360 mW dissipation limit under expected operating conditions.
Part Context
This part belongs to Infineon's depletion mode MOSFET portfolio, designed for high-frequency switching and compact designs. These devices offer low negative turn-off voltages and robust safe operating areas, simplifying circuit complexity compared to standard enhancement-mode alternatives.
Replacement Considerations
Consult official Infineon documentation for verified substitute part numbers. Cross-reference electrical parameters such as breakdown voltage and on-resistance to ensure functional compatibility before implementation.
FAQ
What is the default state of the BSS139L6327HTSA1?
As a depletion mode device, it is in the conducting state when the gate-to-source voltage is zero.
Is this component suitable for automotive applications?
Yes, the BSS139H6327XTSA1 variant is qualified to AEC-Q100 standards, indicating suitability for automotive environments.
