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Product Detailed Parameters
- Description：MOSFET N-CH 60V 230MA SOT23-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel, Depletion Mode
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：230mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：0V, 10V
- Rds On (Max) @ Id, Vgs：3.5Ohm @ 160mA, 10V
- Vgs(th) (Max) @ Id：2.4V @ 26µA
- Gate Charge (Qg) (Max) @ Vgs：1.4 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：39 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS159NH6327XTSA2 is an N-channel depletion mode MOSFET from Infineon's SIPMOS series, housed in a PG-SOT-23 package. It features a drain-source breakdown voltage of 60 V and a continuous drain current of 0.23 A at 25 °C. The device exhibits a maximum on-state resistance of 8 Ω at VGS=0 V and operates within a junction temperature range of -55 °C to +150 °C. It includes dv/dt rating capabilities and is qualified according to AEC-Q101 standards.
Feature Summary
- Depletion mode operation providing normally-on characteristics for constant current source applications
- High dv/dt rating capability suitable for demanding switching environments
- AEC-Q101 qualification ensuring reliability for automotive electronic systems
Applications
- Constant current sources
- Automotive electronics
- High-frequency switching circuits
Procurement Notes
Verify the specific gate threshold voltage band required for your design, as the H6327 suffix indicates standard sorting without specific band selection. Confirm that the depletion mode behavior aligns with your circuit logic requirements. Ensure thermal management meets the specified power dissipation limits under your operating conditions.
Selection Notes
Select this component when a normally-on N-channel switch or constant current sink is needed in a compact SOT-23 footprint. Consider its low gate charge and fast switching speeds for high-frequency applications. Verify compatibility with negative gate drive voltages if used in specific biasing configurations.
Part Context
This part belongs to Infineon's SIPMOS small-signal transistor family, designed for efficient performance in space-constrained designs. The BSS159N specifically targets applications requiring robust switching and reliable operation in automotive and industrial sectors.
Replacement Considerations
Check pinout compatibility and electrical parameters such as VDS, ID, and RDS(on) before substituting. Ensure the replacement device supports depletion mode operation if the original function relies on it.
