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Product Detailed Parameters
- Description：MOSFET N-CH 60V 230MA SOT23-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel, Depletion Mode
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：230mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：0V, 10V
- Rds On (Max) @ Id, Vgs：3.5Ohm @ 160mA, 10V
- Vgs(th) (Max) @ Id：2.4V @ 26µA
- Gate Charge (Qg) (Max) @ Vgs：2.9 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：44 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS159NH6906XTSA1 is an N-channel depletion mode MOSFET from Infineon's SIPMOS series, housed in a PG-SOT-23 package. It features a drain-source breakdown voltage of 60 V and a continuous drain current of 0.23 A at 25°C. The device has a maximum on-state resistance of 8 Ω at VGS=0V and 3.5 Ω at VGS=10V. It operates within a temperature range of -55°C to +150°C and includes a built-in reverse diode with a dv/dt rating of 6 kV/µs.
Feature Summary
- Depletion mode operation for normally-on applications
- High reverse diode dv/dt capability rated at 6 kV/µs
- Qualified according to AEC-Q101 standards
- Gate threshold voltage sorted into specific bands
Applications
- Automotive electronic systems requiring AEC-Q101 qualification
- Normally-on switching circuits utilizing depletion mode characteristics
- High-speed switching applications benefiting from high dv/dt ratings
Procurement Notes
Verify the specific gate threshold voltage band required for your design, as the H6906 suffix indicates sorting into bands rather than a single fixed value. Confirm that the depletion mode behavior aligns with your circuit logic, as the device conducts when VGS is zero. Ensure the PG-SOT-23 footprint matches your PCB layout constraints.
Selection Notes
Select this component when a normally-on N-channel switch is necessary. The low gate charge and fast switching times make it suitable for high-frequency applications. Consider the thermal derating curves if operating near the maximum junction temperature limits. Verify that the 60V breakdown voltage provides sufficient margin for your specific drain-source voltage requirements.
Part Context
This part belongs to the BSS159N family of small-signal transistors. It utilizes Infineon's SIPMOS technology, which is optimized for low power consumption and efficient switching. The H6906 ordering suffix specifically denotes tape and reel packaging with gate threshold voltage binning, distinguishing it from standard unsorted variants.
Replacement Considerations
BSS159NE6906 is listed as a parameter equivalent replacement.
