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Product Detailed Parameters
- Description：MOSFET N-CH 60V 230MA SOT23-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel, Depletion Mode
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：230mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：0V, 10V
- Rds On (Max) @ Id, Vgs：3.5Ohm @ 160mA, 10V
- Vgs(th) (Max) @ Id：2.4V @ 26µA
- Gate Charge (Qg) (Max) @ Vgs：2.9 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：44 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS159NL6906HTSA1 is an N-channel depletion mode small-signal MOSFET from Infineon Technologies, packaged in PG-SOT-23. It features a drain-source breakdown voltage of 60 V and a continuous drain current of 0.23 A at 25 °C. The device exhibits a maximum on-state resistance of 8 Ω at VGS=0 V and includes dv/dt rating capabilities up to 6 kV/µs. Gate threshold voltage is sorted into specific bands for the L6906 suffix.
Feature Summary
- Depletion mode operation with N-channel configuration
- High dv/dt rated capability for reverse diode switching
- Gate threshold voltage sorted into defined bands for precision applications
Applications
- Small-signal switching circuits
- Logic level translation interfaces
- Current source implementations
Procurement Notes
Verify the L6906 ordering suffix indicates gate threshold voltage sorting on the reel label. Confirm package type matches PG-SOT-23 requirements. Check RoHS compliance status against current manufacturing standards. Ensure thermal management aligns with the specified power dissipation limits.
Selection Notes
Select this component when depletion mode behavior is required for logic interfacing or constant current sources. Consider the sorted VGS(th) bands if precise threshold control is necessary. Evaluate the 6 kV/µs dv/dt rating for fast switching environments involving the internal body diode.
Part Context
This part belongs to the SIPMOS® small-signal transistor family by Infineon Technologies. It utilizes standard silicon technology optimized for low-power discrete applications. The device is designed for surface-mount assembly in compact electronic designs requiring reliable small-signal performance.
Replacement Considerations
BSS159NH6906XTSA1
FAQ
What does the L6906 suffix indicate regarding the device characteristics?
The L6906 suffix indicates that the transistors are sorted into specific gate threshold voltage (VGS(th)) bands, which are identified by letters printed on the reel label.
Is the BSS159N capable of handling high dv/dt rates?
Yes, the device is dv/dt rated, supporting a rate of 6 kV/µs under specified conditions of ID=0.23 A, VDS=60 V, and di/dt=200 A/µs.
