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Product Detailed Parameters
- Description：MOSFET N-CH 100V 170MA SOT23-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel, Depletion Mode
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：0V, 10V
- Rds On (Max) @ Id, Vgs：6Ohm @ 170mA, 10V
- Vgs(th) (Max) @ Id：1.8V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs：2.8 nC @ 7 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：68 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The Infineon BSS169H6327XTSA1 is a single N-channel depletion mode MOSFET housed in an SOT-23-3 surface-mount package. It features a drain-source breakdown voltage of 100 V and a continuous drain current of 170 mA at 25°C. The device exhibits a maximum on-resistance of 2.9 Ohms at zero gate-source voltage, with a typical gate charge of 2.1 nC. It operates within a temperature range of -55°C to +150°C and dissipates up to 360 mW. The component meets AEC-Q100 automotive qualification standards.
Feature Summary
- Depletion mode operation ensures the device remains conductive at zero gate-source voltage, functioning as a normally-on switch or constant current source.
- Automotive-grade reliability achieved through AEC-Q100 qualification for robust performance in demanding environments.
- Compact SOT-23-3 packaging facilitates high-density circuit board layouts and efficient thermal management.
Applications
- Automotive electronic systems requiring reliable switching components
- Constant current source circuits for LED driving or biasing
- High-frequency switching applications in compact designs
Procurement Notes
Verify the complete ordering part number, typically BSS169H6327XTSA1, against official manufacturer documentation to ensure correct suffix alignment. Confirm that the specific E6327 variant matches the required AEC-Q100 automotive grade specifications. Cross-reference datasheet revisions to validate electrical parameters before finalizing procurement orders.
Selection Notes
Select this component when a normally-on N-channel configuration is required for low-voltage switching or constant current regulation. The 100V rating provides sufficient headroom for standard automotive supply rails. Ensure the design accommodates the 2.9 Ohm on-resistance for appropriate power dissipation calculations within the specified thermal limits.
Part Context
This component belongs to the BSS169 series of silicon N-channel depletion mode MOSFETs manufactured by Infineon Technologies. These devices are engineered for applications necessitating a default conductive state without gate drive voltage. The series supports various surface-mount packages optimized for automated assembly processes.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative depletion mode MOSFETs based on matching pin configurations, voltage ratings, and thermal characteristics.
