BSS169H6327XTSA1

$0.40

Description：MOSFET N-CH 100V 170MA SOT23-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:326777ef4e06 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 170MA SOT23-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel, Depletion Mode
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：0V, 10V
Rds On (Max) @ Id, Vgs：6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id：1.8V @ 50µA
Gate Charge (Qg) (Max) @ Vgs：2.8 nC @ 7 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：68 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：360mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT23
Package / Case：TO-236-3, SC-59, SOT-23-3

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BSS169H6327XTSA1

Overview

The BSS169H6327XTSA1 is an N-channel depletion mode MOSFET from Infineon's SIPMOS series, housed in a PG-SOT-23 package. It features a drain-source breakdown voltage of 100 V and a continuous drain current of 0.17 A at 25 °C. The device exhibits a maximum on-state resistance of 12 Ω at VGS=0 V and a typical gate threshold voltage of -2.2 V. It supports a power dissipation of 0.36 W and operates within a temperature range of -55 °C to +150 °C.

Feature Summary

Depletion mode operation with dv/dt rating capability
Automotive qualification according to AEC-Q101
Threshold voltage sorting available via reel labeling

Applications

High-frequency switching circuits
Compact design applications requiring small signal transistors
Constant current source implementations

Procurement Notes

Verify the specific VGS(th) band letter printed on the reel label matches the design requirements, as the component is sorted into bands. Confirm that the PG-SOT-23 footprint aligns with the PCB layout. Ensure the depletion mode characteristic is compatible with the intended circuit logic levels.

Selection Notes

Select this component for designs requiring normally-on behavior or high dv/dt immunity. The low gate charge facilitates fast switching speeds. Consider the thermal resistance of 250 K/W when determining heat dissipation needs in minimal footprints. Verify that the negative threshold voltage suits the control interface.

Part Context

This part belongs to the BSS169 family of SIPMOS small-signal transistors. It utilizes silicon technology and is manufactured by Infineon Technologies. The component is designed for surface mount installation and is compliant with RoHS standards and halogen-free requirements.