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Product Detailed Parameters
- Description：MOSFET N-CH 100V 170MA SOT23-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel, Depletion Mode
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：0V, 10V
- Rds On (Max) @ Id, Vgs：6Ohm @ 170mA, 10V
- Vgs(th) (Max) @ Id：1.8V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs：2.8 nC @ 7 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：68 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS169L6906HTSA1 is an N-channel depletion mode small-signal MOSFET from Infineon Technologies, packaged in PG-SOT-23. It features a drain-source breakdown voltage of 100 V and a continuous drain current of 0.17 A at 25 °C. The device has a maximum on-state resistance of 12 Ω and operates within a temperature range of -55 °C to +150 °C. Power dissipation is rated at 0.36 W. The L6906 suffix indicates the component is sorted into specific gate threshold voltage bands.
Feature Summary
- Depletion mode operation for normally-on functionality
- dv/dt rated capability for high-speed switching applications
- Gate threshold voltage sorting for precise parameter control
Applications
- High-frequency switching circuits
- Constant current sources
- Automotive electronics requiring robust dv/dt performance
Procurement Notes
Verify the specific gate threshold voltage band required for your design, as the L6906 suffix denotes sorted bands rather than a single fixed value. Confirm package type PG-SOT-23 and RoHS compliance status with the supplier before ordering. Ensure thermal management aligns with the 0.36 W power dissipation rating under your operating conditions.
Selection Notes
Select this component when a normally-on N-channel MOSFET is required with high dv/dt immunity. The sorted threshold voltage bands allow for tighter circuit tolerances compared to unsorted variants. Consider the low continuous current limit of 0.17 A when designing load paths.
Part Context
This part belongs to Infineon's SIPMOS small-signal transistor family. It utilizes silicon technology optimized for compact SOT-23 packaging. The depletion mode characteristic distinguishes it from standard enhancement-mode MOSFETs, making it suitable for specific analog and RF biasing roles.
Replacement Considerations
Direct substitutes must match the N-channel depletion mode specification and PG-SOT-23 package. Verify that alternative parts meet the 100 V breakdown voltage and similar dv/dt ratings. Cross-reference gate threshold voltage band requirements if precision is critical.
