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Product Detailed Parameters
- Description：MOSFET P-CH 250V 190MA SOT89
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：250 V
- Current - Continuous Drain (Id) @ 25°C：190mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.8V, 10V
- Rds On (Max) @ Id, Vgs：12Ohm @ 190mA, 10V
- Vgs(th) (Max) @ Id：2V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs：6.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：104 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT89
- Package / Case：TO-243AA
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Overview
The BSS192PE6327T is a P-channel enhancement mode MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and is housed in an SOT-89-3 surface-mount package. The device features a drain-source breakdown voltage of 250 V and a continuous drain current rating of 190 mA. Key electrical characteristics include a maximum on-resistance of 7.7 ohms, a gate-source voltage limit of ±20 V, and a typical gate charge of 6.1 nC. It operates within a temperature range of -55 °C to +150 °C with a power dissipation capacity of 1 W.
Feature Summary
- High-voltage capability suitable for demanding switching applications
- Automotive qualification compliant with AEC-Q101 standards
- Robust thermal performance supporting extended operating temperatures
Applications
- Automotive load switching circuits
- General-purpose high-voltage power management
- Industrial control systems requiring isolated switching
Procurement Notes
Verify the specific suffix against official Infineon documentation to confirm tape-and-reel packaging quantities and lead times. Ensure the component meets AEC-Q101 automotive reliability requirements for your target application environment. Cross-reference the datasheet revision date to validate parameter consistency before finalizing procurement specifications.
Selection Notes
Select this component when a P-channel switch with high voltage tolerance is required in a compact SOT-89-3 footprint. Consider the relatively high on-resistance compared to low-voltage alternatives; ensure the load current remains well below the 190 mA limit to manage thermal dissipation effectively within the 1 W power budget.
Part Context
This part belongs to Infineon's discrete MOSFET portfolio designed for robust power switching. The BSS192 series specifically targets applications needing higher voltage isolation than standard logic-level devices provide. Its automotive qualification makes it suitable for integration into vehicle electronics where long-term reliability under varying thermal conditions is critical.
Replacement Considerations
Consult Infineon's official cross-reference tools for verified substitutes. Ensure any replacement maintains the P-channel polarity, SOT-89-3 package compatibility, and equivalent or superior voltage and current ratings.
