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Product Detailed Parameters
- Description：MOSFET P-CH 250V 190MA SOT89
- Series：SIPMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：250 V
- Current - Continuous Drain (Id) @ 25°C：190mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.8V, 10V
- Rds On (Max) @ Id, Vgs：12Ohm @ 190mA, 10V
- Vgs(th) (Max) @ Id：2V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs：6.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：104 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT89
- Package / Case：TO-243AA
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Overview
The BSS192PH6327XTSA1 is a P-channel enhancement-mode MOSFET from Infineon's SIPMOS series, housed in a PG-SOT89 (SOT-89-3) surface-mount package. It features a drain-source breakdown voltage of -250 V and a continuous drain current of -0.19 A at 25°C ambient temperature. The device exhibits a maximum on-state resistance of 12 Ω at VGS = -10 V and ID = -0.19 A. It supports a power dissipation of 1 W at 25°C and operates within a junction temperature range of -55°C to +150°C. The component is qualified according to AEC-Q101 standards.
Feature Summary
- High-voltage capability with a -250 V drain-source breakdown rating suitable for demanding switching applications.
- dv/dt rated design ensuring robust performance against fast transient voltage changes during switching operations.
- Logic-level gate threshold enabling efficient drive compatibility with standard logic interfaces.
Applications
- Automotive load switching circuits requiring high-voltage isolation.
- General-purpose high-side switching applications in industrial control systems.
- Power management modules utilizing P-channel topology for voltage regulation.
Procurement Notes
Verify the specific ordering suffix H6327 corresponds to the required tape and reel packaging quantity of 1000 pieces per reel. Confirm that the AEC-Q101 qualification status meets the specific reliability requirements for automotive or industrial deployment. Ensure the PG-SOT89 footprint matches the target PCB layout constraints before finalizing procurement orders.
Selection Notes
Select this component when a single P-channel transistor with high voltage blocking capability (-250 V) is required in a compact SOT-89-3 form factor. Consider the relatively high on-resistance (up to 12 Ω) which limits suitability for high-current continuous loads. Evaluate thermal derating curves if operating above 25°C ambient temperature to ensure power dissipation limits are not exceeded.
Part Context
This part belongs to Infineon's SIPMOS small-signal transistor family, designed for general-purpose switching. The BSS192P variant specifically targets high-voltage P-channel applications where moderate current handling is sufficient. It complements N-channel counterparts like the BSS606NH6327XTSA1 in complementary bridge configurations.
Replacement Considerations
Direct replacements must match the -250 V rating, P-channel polarity, and SOT-89-3 package. Verify pinout compatibility (Gate-Drain-Source) as variations exist across manufacturers. Cross-reference thermal resistance values to ensure equivalent heat dissipation capabilities under identical mounting conditions.
