BSS209PW L6327

Description：MOSFET P-CH 20V 580MA SOT323-3
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:5454fa416da5 Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 580MA SOT323-3
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：580mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：550mOhm @ 580mA, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 3.5µA
Gate Charge (Qg) (Max) @ Vgs：1.38 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：89.9 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：300mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT323
Package / Case：SC-70, SOT-323

Download product information

BSS209PW L6327

Overview

The BSS209PW is a P-Channel OptiMOS-P small-signal enhancement-mode MOSFET in an SOT-323 package. It features a -20 V drain-source breakdown voltage and a continuous drain current of -0.63 A at 25 °C. The device supports a maximum power dissipation of 0.3 W and operates within a temperature range of -55 °C to 150 °C. Key electrical parameters include a gate threshold voltage ranging from -0.6 V to -1.2 V, with a typical on-state resistance of 379 mΩ at VGS = -4.5 V. It is avalanche rated, dv/dt rated, and qualified according to AEC-Q101.

Feature Summary

Super Logic level operation rated for 2.5 V gate drive
Avalanche energy capability for robust switching performance
dv/dt rating for high-speed transient immunity
Lead-free plating compliant with RoHS standards

Applications

Automotive electronic control units
Low-side load switching applications
General-purpose logic level signal switching

Procurement Notes

Verify the specific ordering suffix H6327 to confirm tape and reel packaging quantities of 1000 pieces per reel. Ensure the component meets the required AEC-Q101 automotive qualification standards for your specific application environment. Confirm that the Pb-free and halogen-free material declarations align with your manufacturing compliance requirements.

Selection Notes

Select this component when a P-Channel MOSFET with low gate charge and fast switching speeds is required. The enhanced gate threshold characteristics allow for direct interfacing with standard logic levels. Consider the thermal resistance values provided for both minimal footprints and larger cooling areas when designing the PCB layout for optimal heat dissipation.

Part Context

This part belongs to Infineon's OptiMOS-P family of small-signal transistors. These devices are designed to offer superior performance compared to standard discrete MOSFETs by combining low on-resistance with optimized gate charge characteristics. The technology focuses on efficiency and reliability in compact surface-mount packages suitable for modern electronics.

Replacement Considerations

Check datasheets for other P-Channel MOSFETs in the SOT-323 package with similar -20 V ratings and comparable RDS(on) values. Verify pinout compatibility and ensure that any substitute meets or exceeds the avalanche and dv/dt ratings specified for the BSS209PW.