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Product Detailed Parameters
- Description：MOSFET P-CH 20V 580MA SOT323-3
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：580mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：550mOhm @ 580mA, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 3.5µA
- Gate Charge (Qg) (Max) @ Vgs：1.38 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：89.9 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：520mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT323
- Package / Case：SC-70, SOT-323
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Overview
The BSS209PW is a P-Channel enhancement mode small-signal MOSFET from Infineon Technologies, utilizing OptiMOS-P technology. It features a -20 V drain-source breakdown voltage and a continuous drain current of -0.58 A at 25°C. The device operates within a temperature range of -55°C to +150°C and is housed in an SOT-323 package. Key electrical characteristics include a maximum on-state resistance of 550 mΩ at VGS = -4.5V and a gate threshold voltage ranging from -0.6 V to -1.2 V. It supports avalanche energy ratings up to 3.5 mJ and reverse diode dv/dt ratings of -6 kV/µs.
Feature Summary
- Super Logic Level capability rated for 2.5 V operation
- Avalanche rated for robust transient handling
- dv/dt rated for high-speed switching applications
Applications
- Small signal amplification circuits
- Low power switching applications
- Automotive electronic modules
Procurement Notes
Verify the specific ordering code Q67042-S4074 against procurement requirements. Confirm that the component meets IEC climatic category standards (55/150/56) for intended environmental conditions. Ensure design compliance with the specified thermal resistance values for both junction-to-soldering point and junction-to-ambient scenarios.
Selection Notes
Select this component for designs requiring a compact P-Channel solution with logic-level gate drive compatibility. The SOT-323 package suits space-constrained PCB layouts. Consider the 550 mΩ maximum RDS(on) for low-current switching efficiency. Verify that the -20 V rating aligns with system voltage levels to prevent breakdown under operating conditions.
Part Context
This part belongs to Infineon's OptiMOS-P small-signal transistor portfolio. It is designed for general-purpose switching and amplification tasks where low cost and small footprint are prioritized. The device is manufactured using silicon technology and is compliant with RoHS directives.
Replacement Considerations
No officially confirmed substitute part numbers are documented in the provided datasheet.
FAQ
What is the maximum avalanche energy rating?
The single pulse avalanche energy rating is 3.5 mJ when ID is -0.58 A, VDD is -10 V, and RGS is 25 Ω.
Is the device suitable for high dv/dt environments?
Yes, the BSS209PW is dv/dt rated with a capability of -6 kV/µs under specified test conditions.
