SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BSS215PL6327HTSA1 is an N-channel Power MOSFET from Infineon Technologies, designed for general-purpose switching applications. It features a drain-source voltage of 20V and a continuous drain current of 4.8A at 25°C case temperature. The device utilizes Trench technology to achieve low on-state resistance, specified as a maximum of 39 milliohms at a gate-source voltage of 10V. This component is housed in a compact SOT-323 surface-mount package, facilitating efficient thermal management and space-saving PCB layouts.
Verify the complete part number including the suffix HTSA1 to ensure correct tape-and-reel packaging configuration. Confirm that the requested components match the specific manufacturing lot requirements for your assembly process. Cross-reference the datasheet revision date to ensure compatibility with your design specifications. Ensure storage conditions adhere to moisture sensitivity level ratings prior to soldering.
Select this component when a small surface-mount footprint is required alongside moderate current handling capabilities. The 20V rating suits low-voltage DC systems where efficiency is critical. Consider the thermal resistance characteristics of the SOT-323 package for heat dissipation needs. Evaluate the gate charge parameters if high-frequency switching speeds are necessary for the target application.
This part belongs to Infineon's portfolio of small-signal power MOSFETs. It complements other devices in the same family offering similar voltage ratings but different current capacities or package types. The series is engineered to meet stringent automotive quality standards, ensuring reliability in demanding operational environments across various electronic subsystems.
Consult official cross-reference lists for direct substitutes. Verify pinout compatibility and electrical parameter equivalence before substitution. Ensure any alternative component meets the same automotive qualification standards if used in regulated applications.