BSS225L6327HTSA1

Description：MOSFET N-CH 600V 90MA SOT89
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:755946a4ce64 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 90MA SOT89
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：90mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：45Ohm @ 90mA, 10V
Vgs(th) (Max) @ Id：2.3V @ 94µA
Gate Charge (Qg) (Max) @ Vgs：5.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：131 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT89
Package / Case：TO-243AA

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BSS225L6327HTSA1

Overview

The BSS225L6327HTSA1 is an n-channel enhancement mode SIPMOS small-signal transistor in a SOT-89 package. It features a drain-source breakdown voltage of 600 V and a continuous drain current of 0.09 A at 25 °C. The device has a maximum on-state resistance of 45 Ω at VGS=4.5V and 10V. It includes a reverse diode rated for 0.09 A continuous forward current. The component is qualified to AEC-Q101 standards and operates within a junction temperature range of -55 °C to 150 °C.

Feature Summary

Logic level gate drive capability
High dv/dt rating for the reverse diode
Automotive grade qualification

Applications

Small power switching applications
Industrial control circuits
Consumer electronics protection

Procurement Notes

Verify the specific L6327 tape and reel packaging configuration, which indicates 3000 pieces per reel. Confirm that the component meets the required AEC-Q101 automotive qualification standards if intended for such environments. Ensure proper external protection measures are applied during assembly to prevent creeping currents between leads due to the package size.

Selection Notes

Select this component for designs requiring high voltage blocking capability in a compact surface-mount form factor. Consider the thermal resistance of 125 K/W and the low continuous current limit when designing heat dissipation strategies. Verify that the logic-level threshold voltage aligns with the available gate drive voltages in the target circuit.

Part Context

This part belongs to Infineon's SIPMOS small-signal transistor family. It utilizes silicon technology optimized for small signal and small power applications. The SOT-89 package provides a balance between power handling and board space efficiency compared to smaller packages like SOT-23.