BSS306NH6327XTSA1

$0.33

Description：MOSFET N-CH 30V 2.3A SOT23-3
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:7dc9a6b6174f Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 2.3A SOT23-3
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：57mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id：2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs：1.5 nC @ 5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：275 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT23
Package / Case：TO-236-3, SC-59, SOT-23-3

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BSS306NH6327XTSA1

Overview

The BSS306NH6327XTSA1 is an N-channel enhancement mode MOSFET from the OptiMOS™ 2 series. It features a maximum drain-source voltage of 30 V and a continuous drain current of 2.3 A at 25 °C. The device has a maximum on-state resistance of 93 mΩ at VGS=4.5 V and 57 mΩ at VGS=10 V. It operates within a temperature range of -55 °C to +150 °C, dissipates up to 0.5 W, and is housed in a PG-SOT23-3 surface-mount package.

Feature Summary

Logic level operation rated for 4.5 V gate drive
Avalanche energy rated capability
Qualified according to AEC-Q101 automotive standards

Applications

Automotive electronic systems
Low-side switching applications
General-purpose small-signal transistor circuits

Procurement Notes

Verify the specific ordering suffix H6327XTSA1 against official Infineon documentation to confirm packaging details and compliance status. Ensure that the component meets all required environmental and quality certifications before finalizing procurement specifications.

Selection Notes

Select this component when a low-voltage, high-current N-channel MOSFET with logic-level compatibility is required. Consider its avalanche rating and automotive qualification for robust designs. Evaluate thermal constraints based on the specified power dissipation and junction-to-ambient resistance values.

Part Context

This part belongs to the BSS306N family within Infineon's OptiMOS™ 2 portfolio. These transistors are designed for efficient switching in compact surface-mount configurations. The series provides reliable performance for automotive and industrial applications requiring small-signal control.