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Product Detailed Parameters
- Description：MOSFET N-CH 30V 2.3A SOT23-3
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：57mOhm @ 2.3A, 10V
- Vgs(th) (Max) @ Id：2V @ 11µA
- Gate Charge (Qg) (Max) @ Vgs：1.5 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：275 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS306NL6327HTSA1 is a dual N-channel enhancement mode MOSFET manufactured by Infineon Technologies. It is housed in a TSOP-6 surface-mount package and utilizes silicon technology. The device features a drain-source breakdown voltage of 30 V and supports a continuous drain current of 2.3 A. Key electrical parameters include a maximum on-resistance of 57 mΩ, a gate-source voltage range of ±20 V, and a threshold voltage of 1.2 V. The component operates within a temperature range of -55 °C to +150 °C with a power dissipation rating of 500 mW.
Feature Summary
- Dual channel configuration for integrated circuit solutions
- Low on-resistance for efficient power switching
- High thermal stability across extended temperature ranges
Applications
- Battery protection circuits
- Power management modules
- Load switching applications
Procurement Notes
Verify the exact part number suffix against official manufacturer documentation, as variations such as XTSA1 or HTSA1 indicate specific tape-and-reel packaging configurations. Confirm availability status directly with authorized distributors, as lifecycle notifications may affect procurement timelines. Ensure compliance with RoHS directives and automotive qualification standards required for the target application environment.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage switching tasks. The TSOP-6 package offers space efficiency compared to single-channel alternatives. Evaluate the 57 mΩ on-resistance against thermal constraints to ensure the 500 mW power dissipation limit is not exceeded during operation. Consider the 30 V rating for compatibility with standard 5 V and 12 V system architectures.
Part Context
This component belongs to Infineon's small signal MOSFET portfolio, designed for general-purpose switching and amplification. The dual configuration allows for synchronized control of two channels within a minimal footprint. It serves as a discrete semiconductor alternative to integrated power switches in consumer electronics and industrial control systems requiring reliable N-channel performance.
Replacement Considerations
Cross-reference with other dual N-channel MOSFETs in the TSOP-6 package from Infineon or competitors. Verify pinout compatibility and electrical parameter alignment, specifically drain-source voltage and on-resistance values, before substitution.
