ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET P-CH 30V 1.5A SOT23-3
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：140mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id：2V @ 6.3µA
- Gate Charge (Qg) (Max) @ Vgs：2.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：294 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
Download product information
Overview
The BSS314PEH6327XTSA1 is a P-channel enhancement mode MOSFET from the OptiMOS-P 3 family, manufactured by Infineon Technologies. It operates with a drain-source breakdown voltage of -30 V and supports a continuous drain current of -1.5 A at 25 °C. The device features a low on-state resistance of 107 mΩ (max 140 mΩ) at VGS = -10 V and 153 mΩ (max 230 mΩ) at VGS = -4.5 V. Packaged in PG-SOT-23, it includes ESD protection rated up to 2000V HBM and meets AEC-Q101 automotive qualification standards.
Feature Summary
- Logic level operation optimized for 4.5 V gate drive applications
- Integrated electrostatic discharge protection compliant with JESD22-A114 standards
- Automotive grade reliability certified under AEC-Q101 specifications
Applications
- Motor control circuits
- Power management systems
- Home appliance logic switching
Procurement Notes
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm that the ordering suffix matches the specified PG-SOT-23 package and tape-and-reel quantity. Ensure compliance with RoHS and halogen-free requirements as documented in the datasheet before finalizing procurement orders.
Selection Notes
Select this component when designing circuits requiring a compact P-channel switch with low threshold voltage capabilities. The 4.5 V logic level rating makes it suitable for direct interfacing with standard microcontrollers. Consider the thermal resistance characteristics for high-current applications to ensure junction temperatures remain within safe operating limits.
Part Context
This part belongs to the BSS314 series of small-signal transistors designed for general-purpose switching. It utilizes Infineon's OptiMOS-P 3 technology to achieve low on-resistance and fast switching speeds within a minimal footprint. The series is widely used in consumer electronics and industrial control boards where space efficiency is critical.
Replacement Considerations
BSS314PEH6327XT
FAQ
What is the maximum pulsed drain current capability?
The device can handle a pulsed drain current of -6.1 A at an ambient temperature of 25 °C.
Does the component support avalanche energy handling?
Yes, it supports single-pulse avalanche energy of 6 mJ when driven at -1.5 A with a gate resistance of 25 Ω.
