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Product Detailed Parameters
- Description：MOSFET N-CH 60V 3.2A SOT89
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：3.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：60mOhm @ 3.2A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 15µA
- Gate Charge (Qg) (Max) @ Vgs：5.6 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：657 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT89
- Package / Case：TO-243AA
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Overview
The BSS606NH6327XTSA1 is an N-channel enhancement mode MOSFET from the OptiMOS-3 series, rated for a maximum drain-source voltage of 60 V and continuous drain current of 3.2 A at 25 °C. It features a PG-SOT-89 package with a thermal resistance junction-to-case of 10 K/W. The device has a gate threshold voltage ranging from 1.3 V to 2.3 V and a typical total gate charge of 3.7 nC. It supports avalanche energy ratings and reverse diode characteristics including a forward voltage of up to 1.1 V.
Feature Summary
- OptiMOS-3 technology providing low on-state resistance and high efficiency
- Avalanche rated capability for robust operation under transient conditions
- Qualified according to AEC-Q101 standards for automotive applications
- Logic level gate drive compatibility with a 4.5 V rating
Applications
- Automotive electronic systems requiring AEC-Q101 compliance
- Low-side switching in power distribution circuits
- General purpose logic-level signal switching
- Load switching applications in compact designs
Procurement Notes
Verify the complete part number BSS606NH6327XTSA1 against official Infineon documentation to ensure correct package type and marking code. Confirm that the H6327 suffix corresponds to the specified tape and reel packaging quantity. Cross-reference electrical parameters such as RDS(on) limits and thermal resistance values with the latest datasheet revision before finalizing procurement specifications.
Selection Notes
Select this component when a 60 V N-channel MOSFET with automotive qualification is required. The PG-SOT-89 package offers a balance between current handling capacity and board space. Ensure the application operates within the specified temperature range of -55 °C to 150 °C. Consider the avalanche energy rating if the circuit experiences inductive load switching or voltage spikes exceeding standard operating limits.
Part Context
This component belongs to the Infineon OptiMOS-3 family of small-signal transistors. The BSS606N variant specifically targets applications needing enhanced ruggedness through avalanche rating. It utilizes silicon technology optimized for low conduction losses while maintaining fast switching speeds suitable for modern electronic control units and power management modules.
Replacement Considerations
Direct substitutes must match the PG-SOT-89-3 package, 60 V rating, and N-channel enhancement mode configuration. Verify equivalent thermal resistance and current carrying capabilities. Automotive qualified replacements should also meet AEC-Q101 standards to maintain system reliability requirements.
