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Product Detailed Parameters
- Description：MOSFET N-CH 60V 200MA SOT23-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.3V @ 26µA
- Gate Charge (Qg) (Max) @ Vgs：1.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：56 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS7728N G is an N-channel enhancement mode small-signal transistor from Infineon Technologies, utilizing SIPMOS technology. It operates with a maximum drain-source voltage of 60 V and supports continuous drain currents up to 0.2 A at 25°C. The device features logic-level gate drive capability with a typical on-resistance of 4.3 Ω at VGS=4.5V. Key electrical parameters include a gate threshold voltage range of 1.3 V to 2.3 V, input capacitance of 37 pF, and total gate charge of 1 nC. It is housed in a PG-SOT-23 package and rated for junction temperatures between -55°C and +150°C.
Feature Summary
- Logic level operation enabling direct interface with standard digital logic circuits
- dv/dt rated design providing robustness against rapid voltage transients
- SIPMOS technology ensuring high reliability and compact form factor
Applications
- Low-side switching applications in consumer electronics
- Signal routing and analog switching functions
- Load switching in battery-powered portable devices
Procurement Notes
Verify the specific ordering suffix (e.g., L6327) to confirm tape and reel quantities, as packaging formats may vary by region or distributor. Ensure the component version matches the required datasheet revision for critical timing characteristics. Cross-reference the part number with official Infineon channels to confirm current production status and availability constraints before finalizing procurement plans.
Selection Notes
Select this component for applications requiring low-voltage switching with minimal gate drive requirements. The logic-level characteristic simplifies driver circuit design compared to standard threshold devices. Consider the thermal resistance limits when determining heat dissipation needs in dense PCB layouts. Evaluate the dv/dt rating if the application involves fast-switching environments prone to voltage spikes.
Part Context
This component belongs to Infineon's SIPMOS small-signal transistor portfolio, designed for general-purpose switching tasks. It complements larger power MOSFETs by offering a compact solution for low-current control applications. The PG-SOT-23 package facilitates surface-mount assembly in space-constrained designs common in modern electronic equipment.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains compatible pinout configurations, voltage ratings, and thermal performance characteristics to guarantee circuit functionality without redesign.
