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Product Detailed Parameters
- Description：MOSFET N-CH 20V 2.3A SOT23-3
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 2.5V
- Rds On (Max) @ Id, Vgs：57mOhm @ 2.3A, 2.5V
- Vgs(th) (Max) @ Id：750mV @ 11µA
- Gate Charge (Qg) (Max) @ Vgs：1.7 nC @ 2.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：529 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS806NL6327HTSA1 is an N-channel enhancement mode MOSFET from Infineon Technologies, part of the OptiMOS™ family. It features a 20V drain-source voltage and a continuous drain current of 2.3A at 25°C. The device offers a maximum on-resistance of 57mΩ at Vgs=2.5V and 2.3A. Key electrical parameters include a gate charge of 1.7nC @ 2.5V and input capacitance of 529pF @ 10V. It operates within a temperature range of -55°C to 150°C with a power dissipation of 500mW. The component is AEC-Q101 qualified for automotive applications and housed in a PG-SOT23 package.
Feature Summary
- OptiMOS™ technology providing low on-resistance and optimized switching performance
- Automotive grade qualification compliant with AEC-Q101 standards
- Enhanced thermal stability supporting operation up to 150°C junction temperature
Applications
- Automotive load switching applications
- Low-side switching in vehicle electronics
- General purpose power management circuits requiring high reliability
Procurement Notes
Verify the specific suffix 'L6327' against official Infineon documentation to confirm exact tape-and-reel specifications and marking codes. Ensure compatibility with standard SOT-23 footprint requirements during PCB layout. Confirm that the AEC-Q101 qualification meets the specific reliability class required for the target automotive application before finalizing procurement.
Selection Notes
Select this component for designs requiring robust N-channel switching with low conduction losses in a compact surface-mount package. The 20V rating suits low-voltage automotive systems. Consider the 57mΩ Rds(on) for efficiency calculations at 2.3A loads. Verify that the 1.7nC gate charge aligns with the driving capability of the control logic to ensure adequate switching speeds without excessive drive current demands.
Part Context
This part belongs to the BSS806 series of single N-channel MOSFETs manufactured by Infineon Technologies. It utilizes silicon planar technology within the OptiMOS™ portfolio, designed specifically for cost-effective and efficient power switching solutions. The PG-SOT23 package provides a small form factor suitable for space-constrained electronic assemblies.
Replacement Considerations
Consult official Infineon cross-reference guides for verified substitutes. Potential alternatives may include other BSS806 variants or comparable 20V N-channel MOSFETs from other manufacturers, provided they match the pinout, Rds(on), and thermal characteristics.
