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Product Detailed Parameters
- Description：MOSFET P-CH 50V 130MA SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：130mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：10Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：1.3 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：73 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The onsemi BSS84-H is a P-channel enhancement mode MOSFET designed for small-signal switching applications. It features a maximum drain-source voltage of 50 V and a continuous drain current of 130 mA at 25°C. The device utilizes a SOT-23 surface-mount package with three pins. Key electrical characteristics include a maximum on-resistance of 10 Ω at a gate-source voltage of -5 V and a typical gate charge of 0.9 nC. It operates within a temperature range of -65°C to 150°C junction temperature.
Feature Summary
- P-channel enhancement mode construction for logic-level control
- Integrated body diode for inductive load handling
- SOT-23 surface-mount packaging for compact board space
Applications
- Low-side switching for small loads
- Battery protection circuits
- General-purpose signal switching
Procurement Notes
Verify the specific suffix 'H' against the official onsemi datasheet, as standard listings often use suffixes like 'LT1' or 'G'. Confirm that the requested variant matches the exact electrical specifications and package dimensions defined in the manufacturer's documentation before procurement.
Selection Notes
Select this component for low-current P-channel switching tasks requiring a compact footprint. Ensure the application voltage does not exceed the 50 V rating and that the thermal management supports the specified power dissipation limits within the operating temperature range.
Part Context
This part belongs to the BSS84 series of P-channel MOSFETs widely used in consumer electronics and industrial control. It serves as a standard solution for low-power switching where size constraints are critical. The device is manufactured by onsemi, a leading provider of semiconductor solutions.
Replacement Considerations
Direct substitutes include BSS84LT1G and BSS84 from onsemi. Other manufacturers offer equivalent parts such as Nexperia BSS84 or Diodes Incorporated BSS84-7, provided they meet the same voltage, current, and package requirements.
