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Product Detailed Parameters
- Description：MOSFET N/P-CH 60V/50V SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V, 50V
- Current - Continuous Drain (Id) @ 25°C：115mA, 130mA
- Rds On (Max) @ Id, Vgs：7.5Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V, 45pF @ 25V
- Power - Max：200mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The BSS8402DW-7-F is a complementary pair enhancement mode MOSFET in an SOT363 package. It integrates an N-channel device (Q1) and a P-channel device (Q2). Q1 features a 60V drain-source voltage, 115mA continuous current, and 13.5Ω on-resistance at VGS=10V. Q2 provides -50V breakdown, -130mA current, and 10Ω on-resistance at VGS=-5V. The total power dissipation is 200mW with a thermal resistance of 625°C/W. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Complementary N-channel and P-channel configuration for space-efficient designs
- Optimized for low on-state resistance while maintaining fast switching performance
- Low gate threshold voltage enabling efficient logic-level driving
- Totally lead-free and fully RoHS compliant construction
Applications
- General purpose interfacing switches
- Power management functions
- Analog switching applications
Procurement Notes
Verify the specific ordering suffix to confirm packaging quantity. The -7-F suffix indicates a 3,000-unit tape and reel format. Ensure compatibility with standard surface mount assembly processes. Confirm that the standard grade meets project requirements rather than the automotive qualified variant.
Selection Notes
Select this component when a matched N-P channel pair is required in a minimal footprint. The SOT363 case size supports high-density board layouts. Consider the distinct drive voltages; Q1 requires 10V for optimal RDS(ON), while Q2 operates effectively at -5V. Verify thermal constraints given the 625°C/W junction-to-ambient resistance.
Part Context
This part belongs to Diodes Incorporated's complementary MOSFET family, specifically combining a 2N7002-type N-channel structure with a BSS84-type P-channel structure. It serves as a compact solution for dual-transistor circuits where matching characteristics and small physical dimensions are prioritized over high-power handling capabilities.
Replacement Considerations
Public confirmed substitute: BSS8402DWQ-7-F. This variant offers AEC-Q101 qualification and IATF 16949 manufacturing certification while maintaining identical electrical specifications and packaging.
