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Product Detailed Parameters
- Description：MOSFET N/P-CH 60V/50V SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V, 50V
- Current - Continuous Drain (Id) @ 25°C：115mA (Ta), 130mA (Ta)
- Rds On (Max) @ Id, Vgs：13.5Ohm @ 500mA, 10V, 10Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id：2.5V @ 250µA, 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V, 45pF @ 25V
- Power - Max：200mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The BSS8402DW-7-G is a complementary pair enhancement mode MOSFET in an SOT363 package. It integrates an N-channel device (Q1) and a P-channel device (Q2). Q1 features a drain-source breakdown voltage of 60V, continuous drain current of 115mA at +25°C, and on-resistance of 13.5Ω max at VGS=10V. Q2 has a breakdown voltage of -50V, continuous drain current of -130mA, and on-resistance of 10Ω max at VGS=-5V. The total power dissipation is 200mW with a thermal resistance of 625°C/W. Operating temperature range spans from -55°C to +150°C.
Feature Summary
- Complementary N-channel and P-channel configuration for efficient interfacing
- Low on-state resistance optimized for high efficiency power management
- Fast switching speed with low input capacitance and leakage
- Totally lead-free and fully RoHS compliant construction
Applications
- General purpose interfacing switch
- Power management functions
- Analog switch applications
Procurement Notes
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging quantity and compliance status. The datasheet lists standard tape and reel options such as -7-F and -13-F. Confirm that the -G suffix aligns with the required manufacturing specifications and environmental declarations before finalizing procurement orders.
Selection Notes
Select this component when a compact dual-transistor solution is required for low-voltage signal switching or logic level translation. The SOT363 package minimizes board space compared to discrete single transistors. Ensure the application voltage does not exceed 60V for the N-channel section or 50V for the P-channel section while considering the 200mW total power dissipation limit.
Part Context
This part belongs to the BSS8402DW family of complementary MOSFET pairs manufactured by Diodes Incorporated. It serves as a monolithic alternative to using separate N-channel and P-channel devices, simplifying circuit design for general-purpose switching tasks. The device utilizes molded plastic case material with a UL 94V-0 flammability rating.
Replacement Considerations
Direct replacements include the BSS8402DW-7-F and BSS8402DW-13-F variants which share identical electrical characteristics but differ in reel packaging quantities.
