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Product Detailed Parameters
- Description：MOSFET P-CH 50V 130MA SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：130mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：10Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：1.3 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：73 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS84_D87Z is a P-channel enhancement mode MOSFET manufactured by onsemi, housed in an SOT-23 surface-mount package. It features a drain-source voltage rating of 50 V and a continuous drain current of 130 mA at ambient temperature. The device dissipates up to 360 mW of power and operates within a junction temperature range of -55°C to +150°C. Key electrical characteristics include a gate-source breakdown voltage of ±20 V and a typical gate charge of 0.9 nC. The component is designed for general switching applications requiring low input capacitance and high reliability.
Feature Summary
- P-channel enhancement mode construction for efficient switching control
- Low gate charge capability supporting rapid switching transitions
- Robust thermal performance with extended operating temperature range
- Compact SOT-23 footprint suitable for dense surface-mount layouts
Applications
- High-side load switching circuits
- General-purpose signal switching
- Battery protection modules
- Relay driver interfaces
Procurement Notes
Verify the specific D87Z suffix against official onsemi documentation to confirm tape-and-reel specifications and marking codes. Ensure compatibility with existing PCB footprints and reflow soldering profiles. Cross-reference datasheet revisions to validate updated electrical limits before finalizing procurement orders.
Selection Notes
Select this component when a P-channel MOSFET with 50 V rating and SOT-23 packaging is required. Evaluate the 130 mA current limit against peak load demands. Consider the 0.9 nC gate charge for drive circuit complexity. Confirm that the 360 mW power dissipation aligns with thermal management constraints in the target enclosure.
Part Context
This part belongs to the BSS84 series of small-signal MOSFETs from onsemi. The series is widely utilized in portable electronics and automotive subsystems due to its balance of performance and size. The D87Z designation typically indicates a specific reel quantity or packaging variant distributed through authorized channels.
Replacement Considerations
Direct substitutes include BSS84LT1G from onsemi and BSS84-7 from Diodes Incorporated. Verify pinout compatibility and ensure equivalent voltage and current ratings are maintained during substitution.
