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Product Detailed Parameters
- Description：MOSFET 2P-CH 50V 0.13A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：50V
- Current - Continuous Drain (Id) @ 25°C：130mA
- Rds On (Max) @ Id, Vgs：10Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：45pF @ 25V
- Power - Max：300mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The BSS84DW-7-F is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of -50 V and a continuous drain current (I_D) of -130 mA at +25°C. The device exhibits a maximum static drain-source on-resistance (R_DS(ON)) of 10 Ω at V_GS = -5 V and I_D = -0.1 A, with a typical value of 6 Ω. The gate threshold voltage (V_GS(th)) ranges from -0.8 V to -2.0 V at I_D = -1 mA. Total power dissipation is rated at 300 mW at +25°C, supported by a thermal resistance (R_θJA) of 417 °C/W. Operating and storage temperatures span from -55°C to +150°C.
Feature Summary
- Dual configuration integrating two independent P-channel enhancement mode MOSFETs within a single SOT363 package for space-constrained designs.
- Optimized low on-state resistance combined with fast switching speed characteristics suitable for high-efficiency power management applications.
- Low input capacitance and low gate threshold voltage designed to minimize drive requirements and improve overall system efficiency.
Applications
- General-purpose interfacing switches
- Power-management functions
- Analog switches
Procurement Notes
Verify the specific ordering suffix '-7-F' corresponds to the standard tape and reel packaging containing 3,000 units per carrier. Confirm that the component meets RoHS 3 compliance standards and is halogen-free as defined by the manufacturer's green product specifications. Ensure the procurement channel is authorized to guarantee adherence to standard terms and conditions.
Selection Notes
Select this component when a compact dual P-channel solution is required for low-voltage signal or power switching. The SOT363 package provides a small footprint compared to discrete single transistors. Evaluate the 10 Ω R_DS(ON) limit against load requirements and ensure the 300 mW power dissipation rating accommodates the expected thermal environment without exceeding the junction temperature limits.
Part Context
This part belongs to the BSS84 series of P-channel MOSFETs produced by Diodes Incorporated under the DiodesZetex brand. It serves as the dual-channel variant packaged in SOT363, distinct from single-channel versions like the BSS84-7-F in SOT-23. The device is engineered for general-purpose switching tasks where board space is limited.
Replacement Considerations
The automotive-compliant version BSS84DWQ is available under a separate datasheet for high-reliability applications. Verify pinout compatibility if substituting with other dual P-channel MOSFETs in the SOT363 package, as internal schematic configurations may vary between manufacturers.
