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Product Detailed Parameters
- Description：P Channel MOSFET,50V,SOT-363
- Series：*
- Mfr：Bruckewell
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The BSS84DW is a dual P-channel enhancement mode MOSFET manufactured by Bruckewell in an SOT-363 package. It features a drain-source voltage of -50 V and a continuous drain current of -130 mA at 25°C. The device exhibits a typical on-resistance of 2.1 Ω at VGS=-5V and ID=-0.1A, with a maximum of 10 Ω. Gate threshold voltage ranges from -0.8 V to -2 V. Power dissipation is rated at 0.3 W, with a thermal resistance junction-to-ambient of 417 °C/W. Operating temperatures span -55°C to +150°C.
Feature Summary
- Low on-resistance for efficient power handling
- High-speed switching capability
- Simple drive circuit requirements
- Easy parallel use configuration
Applications
- P-channel enhancement mode effect transistor applications
- General switching applications
Procurement Notes
Verify the specific manufacturer designation when sourcing, as the BSS84DW part number is widely used across multiple semiconductor vendors including Diodes Incorporated and others. Confirm that the component matches the Bruckewell datasheet specifications, particularly the SOT-363 package and electrical ratings, to ensure compatibility with the intended design requirements.
Selection Notes
Select this component for low-power switching circuits requiring a dual P-channel configuration in a compact surface-mount footprint. The low gate threshold voltage allows for direct interfacing with standard logic levels. Ensure thermal management accounts for the high thermal resistance value in free-air conditions.
Part Context
This component belongs to the class of small-signal dual P-channel MOSFETs designed for surface-mount assembly. It utilizes an SOT-363 (SC-88) plastic case with matte tin plated leads. The device is constructed using silicon technology and is molded with a compound rated UL 94V-0 for flammability.
Replacement Considerations
Cross-reference with other manufacturers' BSS84DW equivalents such as those from Diodes Incorporated or Micro Commercial Components. Verify pinout compatibility and electrical parameter alignment before substitution.
