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Product Detailed Parameters
- Description：MOSFET P-CH 60V 170MA SOT23-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8Ohm @ 170mA, 10V
- Vgs(th) (Max) @ Id：2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs：1.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：19 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS84P E6433 is a P-channel enhancement mode small signal MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and is housed in an SOT-23 surface-mount package. The device supports a drain-source breakdown voltage of -60 V and a continuous drain current of 170 mA at 25°C. Key electrical characteristics include a maximum on-resistance of 8000 mΩ at 10 V gate drive, a typical gate charge of 1 nC, and a power dissipation rating of 360 mW. The component operates within a temperature range of -55°C to +150°C.
Feature Summary
- Single P-channel configuration for low-side switching applications
- Enhancement mode operation with defined threshold voltage range
- Small signal design optimized for general-purpose switching tasks
Applications
- Low-side load switching circuits
- General-purpose signal path control
- Battery protection circuitry
Procurement Notes
Verify the specific suffix E6433 against official Infineon documentation to confirm manufacturing details and compliance status. Confirm availability through authorized channels as distribution status may vary. Ensure compatibility with standard SOT-23 footprints during integration planning.
Selection Notes
Select this component for applications requiring a compact P-channel switch with moderate voltage handling capabilities. Evaluate the high on-resistance relative to modern alternatives if efficiency is critical. Confirm thermal management requirements align with the specified power dissipation limits under expected operating conditions.
Part Context
This part belongs to the BSS84 series of small signal MOSFETs from Infineon Technologies. It serves as a discrete semiconductor solution for basic switching functions in consumer and industrial electronics. The SOT-23 packaging facilitates automated assembly in space-constrained printed circuit board designs.
Replacement Considerations
Consult official replacement guides for equivalent P-channel MOSFETs in SOT-23 packages. Verify pinout compatibility and electrical parameter overlaps before substitution.
