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Product Detailed Parameters
- Description：MOSFET P-CH 60V 170MA SOT23-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8Ohm @ 170mA, 10V
- Vgs(th) (Max) @ Id：2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs：1.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：19 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS84PH6327XTSA1 is a single-channel P-Channel enhancement mode MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and is housed in an SMD/SMT SOT-323-3 package. The device features a drain-source breakdown voltage (Vds) of 60 V and a continuous drain current (Id) of 150 mA at 25°C. Key electrical parameters include a maximum on-resistance (Rds On) of 4.6 Ohms, a gate-source voltage rating of ±20 V, and a typical gate charge (Qg) of 1.5 nC. It operates within a temperature range of -55°C to +150°C with a power dissipation of 300 mW.
Feature Summary
- Single-channel P-Channel configuration for efficient switching applications
- Automotive qualification compliant with AEC-Q100 standards
- Compact SOT-323-3 surface-mount packaging for space-constrained designs
Applications
- Automotive electronic systems requiring qualified components
- Low-current load switching circuits
- General-purpose signal or power path control
Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to ensure correct tape-and-reel specifications. Confirm that the component meets the required automotive reliability standards if deployed in vehicle electronics. Cross-reference the datasheet revision date to validate parameter accuracy before finalizing procurement orders.
Selection Notes
Select this component when a low-voltage P-Channel switch is needed in a compact footprint. The 60V rating suits low-side or high-side logic interfacing where current demands remain below 150mA. Ensure thermal management accommodates the 300mW dissipation limit in the SOT-323-3 package during operation.
Part Context
This part belongs to Infineon's portfolio of small-signal MOSFETs designed for general-purpose switching. The BSS84 series offers a balance of performance and size, suitable for portable and automotive electronics. The H6327XTSA1 designation indicates specific manufacturing and packaging attributes defined by the supplier.
Replacement Considerations
Consult official cross-reference guides for verified substitutes. Ensure any replacement matches the P-Channel polarity, 60V Vds rating, and SOT-323-3 package dimensions.
