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The BSS84PW L6327 is a P-channel enhancement mode MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and is housed in an SOT-323-3 surface-mount package. The device features a drain-source breakdown voltage of 60 V and supports a continuous drain current of 150 mA. Key electrical parameters include a maximum gate-source voltage of ±20 V, a typical on-resistance of 4.6 Ohms, and a gate charge of 1.5 nC. It operates within a temperature range of -55 °C to +150 °C with a power dissipation rating of 300 mW.
Verify the exact part number suffix against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets specific automotive reliability requirements if intended for AEC-Q100 qualified designs. Cross-reference datasheet revisions to validate parameter consistency before finalizing procurement orders.
Select this component when a compact single-channel P-channel switch is required for low-current applications. The SOT-323-3 package offers space efficiency for dense PCB layouts. Ensure the design accounts for the 4.6 Ohm on-resistance to manage power dissipation effectively within the 300 mW thermal limit during continuous operation.
This part belongs to Infineon's portfolio of small-signal MOSFETs designed for general-purpose and automotive applications. The BSS84 series provides reliable performance in compact packages, supporting various consumer and industrial electronics where space constraints and low power consumption are critical design factors.
Yes, the component is qualified according to the AEC-Q100 standard, making it suitable for use in automotive electronic systems.
The device supports a maximum junction temperature of +150 °C, allowing for operation in high-temperature environments.