BSS84Q-13-F

$0.14

Description：BSS FAMILY SOT23 T&R 10K
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:72af7619179e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：BSS FAMILY SOT23 T&R 10K
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：0.59 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：45 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：300mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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BSS84Q-13-F

Overview

The BSS84Q-13-F is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -50V drain-source voltage (BVDSS) and a continuous drain current (ID) of -130mA at +25°C. The maximum on-resistance (RDS(ON)) is 10Ω at VGS = -5V. The device operates within a junction temperature range of -55°C to +150°C with a total power dissipation of 300mW. It utilizes an SOT23 package and is qualified to AEC-Q101 standards.

Feature Summary

Qualified to AEC-Q101 standards for high reliability in automotive applications
Designed to minimize on-state resistance while maintaining superior switching performance
Manufactured in IATF 16949 certified facilities with PPAP capability
Totally lead-free, fully RoHS compliant, and halogen/antimony free

Applications

General purpose interfacing switches
Power-management functions
Analog switches

Procurement Notes

Verify the specific ordering suffix '-13-F' corresponds to the 10,000-unit tape and reel carrier configuration as defined in the manufacturer's ordering information. Confirm that the component meets the required automotive change control specifications and PPAP documentation needs for your specific application environment before finalizing procurement.

Selection Notes

Select this component for designs requiring a P-channel MOSFET with low input capacitance and fast switching speeds. Ensure the gate-source voltage limits are respected within the ±20V range. Consider the thermal resistance characteristics when designing for ambient temperatures approaching the maximum operating limit of +150°C.

Part Context

This part belongs to the BSS84Q family of P-channel enhancement mode field effect transistors from Diodes Incorporated. It is specifically engineered to meet stringent automotive requirements, distinguishing it from standard commercial grade devices through its qualification processes and manufacturing certifications.