BSS84V-7

BSS84V-7

  • Description:MOSFET 2P-CH 50V 0.13A SOT563
  • Series:-

SKU:df377f366e98 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2P-CH 50V 0.13A SOT563
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):50V
  • Current - Continuous Drain (Id) @ 25°C:130mA
  • Rds On (Max) @ Id, Vgs:10Ohm @ 100mA, 5V
  • Vgs(th) (Max) @ Id:2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:45pF @ 25V
  • Power - Max:150mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563
  • Grade:-
  • Qualification:-

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BSS84V-7

Overview

The BSS84V-7 is a dual P-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It integrates two independent P-channel MOSFETs within a single surface-mount package, designed for low-power switching applications. The device operates with a maximum drain-source voltage of 50 V and supports a continuous drain current of 130 mA per channel. Key electrical characteristics include a gate-source voltage rating of ±20 V and a maximum power dissipation of 300 mW at 25°C ambient temperature. The component functions reliably across an operating temperature range from -55°C to +150°C junction temperature.

Feature Summary

  • Dual configuration integrating two isolated P-channel enhancement mode transistors in one compact package
  • Designed for efficient load switching and low-power signal routing in portable electronics
  • Enhanced thermal stability supporting operation up to 150°C junction temperature

Applications

  • Battery protection circuits in mobile devices
  • Load switches for peripheral power management
  • Low-side switching in portable consumer electronics

Procurement Notes

Verify the specific datasheet revision (DS30605 Rev. 7) when sourcing, as manufacturing updates may occur. Confirm package marking codes match the official Diodes Incorporated specifications. Ensure compliance with RoHS directives if required for your assembly process. Cross-reference pinouts carefully against the SOT-363 or SC-88 footprint depending on the exact variant supplied.

Selection Notes

Select this component when space constraints require dual switching functionality in a minimal footprint. Compare Rds(on) values at specific Vgs levels against alternative dual P-channel MOSFETs to ensure compatibility with your logic drive voltages. Verify that the 130 mA current rating meets the peak load requirements of your application without exceeding thermal limits.

Part Context

This part belongs to the BSS84 family of dual P-channel MOSFETs from Diodes Incorporated. It shares functional similarities with parts like the BSS84DW-7-F but may differ in specific packaging dimensions or internal die configurations. The 'V' suffix typically denotes a specific package style or revision within the manufacturer's lineup, distinct from single-channel variants like the BSS84-7.

Replacement Considerations

Direct substitutes include the BSS84DW-7-F from Diodes Incorporated. Other compatible dual P-channel MOSFETs from manufacturers such as Alpha & Omega Semiconductor (e.g., AO4801, AO4813) may serve as alternatives if pinout and electrical parameters align with the design requirements.

BSS84V-7BSS84V-7

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