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Product Detailed Parameters
- Description：PCH -60V -0.21A, SOT-323, SMALL
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：210mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5.3Ohm @ 210mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：34 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：200mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：UMT3
- Package / Case：SC-70, SOT-323
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Overview
The BSS84WT106 is a single P-channel enhancement mode MOSFET manufactured by ROHM Semiconductor. It utilizes silicon technology and is housed in an SOT-323 (UMT3) surface-mount package with three terminals. Key electrical parameters include a drain-source breakdown voltage of -60 V, a continuous drain current of -0.21 A, and a maximum power dissipation of 300 mW. The device features a gate-source voltage rating of ±20 V and a typical on-resistance of 3.5 Ohms at Vgs = -4.5 V. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Integrates ESD protection diodes within the compact SOT-323 package for enhanced circuit reliability.
- Designed as a low-voltage switch suitable for high-side load switching applications.
- Supports relay driver circuits through efficient signal control capabilities.
Applications
- Switching circuits
- High-side load switches
- Relay drivers
Procurement Notes
Verify the specific suffix 'WT106' against official ROHM documentation to confirm tape-and-reel packaging quantities and RoHS compliance status. Ensure the component matches the required SOT-323 footprint and pinout configuration for your PCB layout. Cross-reference datasheet revisions to validate thermal characteristics and absolute maximum ratings before final integration.
Selection Notes
Select this component for designs requiring a compact P-channel MOSFET with integrated ESD protection. The SOT-323 package offers space efficiency for portable electronics. Evaluate the 60V breakdown voltage and 210mA current capacity against load requirements. Consider the 300mW power dissipation limit when determining thermal management needs in enclosed environments.
Part Context
This part belongs to ROHM's small-signal MOSFET lineup, specifically engineered for general-purpose switching tasks. The BSS84 series is widely recognized for its compatibility with standard logic levels and robust performance in consumer electronics. The UMT3/SOT-323 form factor aligns with industry standards for miniaturized surface-mount assemblies.
Replacement Considerations
BSS84WAHZGT106 shares the same SOT-323 package and similar electrical characteristics, serving as a potential alternative. Verify pinout compatibility and exact parameter tolerances before substitution.
