BSS87 E6433

$0.24

Description：MOSFET N-CH 240V 260MA SOT89
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:59ba54d58f5f Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 240V 260MA SOT89
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：240 V
Current - Continuous Drain (Id) @ 25°C：260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6Ohm @ 260mA, 10V
Vgs(th) (Max) @ Id：1.8V @ 108µA
Gate Charge (Qg) (Max) @ Vgs：5.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：97 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT89
Package / Case：TO-243AA

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BSS87 E6433

Overview

The BSS87 E6433 is a single N-channel enhancement mode MOSFET manufactured by Infineon Technologies. It utilizes SIPMOS technology and is housed in a PG-SOT89 surface-mount package. The device features a drain-source breakdown voltage of 240 V and supports a continuous drain current of 260 mA at ambient temperature. Key electrical parameters include a maximum on-resistance of 6 Ohms at 10 V gate drive, a threshold voltage of 1.8 V, and a power dissipation rating of 1 W. It operates within a junction temperature range of -55°C to +150°C and holds AEC-Q101 automotive qualification.

Feature Summary

High-voltage capability with 240 V drain-source breakdown voltage for robust switching applications
Automotive-grade reliability certified under the AEC-Q101 standard
Integrated thermal management supporting up to 1 W power dissipation in a compact SMD package

Applications

Automotive load switching circuits requiring high voltage isolation
Industrial power control systems utilizing surface-mount topology
General-purpose high-side or low-side switching in battery-powered equipment

Procurement Notes

Verify component authenticity through authorized distribution channels due to end-of-life status. Confirm specific manufacturing date codes and lot traceability against original datasheet specifications. Ensure storage conditions comply with moisture sensitivity level requirements prior to reflow soldering processes.

Selection Notes

Select this component when a 240 V rated N-channel MOSFET is required in a PG-SOT89 footprint. Consider the 6 Ohm on-resistance for efficiency calculations at 260 mA loads. Verify that the 1.8 V threshold voltage aligns with the available logic drive levels in the target circuit design.

Part Context

This part belongs to Infineon's SIPMOS series of small-signal MOSFETs designed for general-purpose switching. The E6433 suffix denotes the specific tape-and-reel packaging configuration used for automated assembly. It represents a silicon-based discrete semiconductor solution distinct from integrated driver ICs or complex microcontroller units found in broader product catalogs.