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The BSV236SPH6327XTSA1 is a single-channel P-Channel enhancement mode MOSFET manufactured by Infineon Technologies using silicon technology. It features a 20 V drain-source breakdown voltage and supports a continuous drain current of 1.5 A. The device exhibits a maximum on-resistance of 131 mOhms and operates with a gate-source voltage range of -12 V to +12 V. Key switching parameters include a gate charge of 5.7 nC, a fall time of 12.2 ns, and a rise time of 8.5 ns. It is housed in an SOT-363-6 surface-mount package, rated for power dissipation up to 560 mW, and functions within a temperature range of -55 °C to +150 °C.
Verify the specific suffix H6327XTSA1 against official Infineon documentation to confirm tape-and-reel packaging specifications and RoHS compliance status. Ensure the ordering part number matches the exact datasheet revision required for your design. Cross-reference the component marking code with manufacturer guidelines to prevent counterfeit risks during sourcing.
Select this component when automotive qualification is mandatory for low-voltage P-channel applications. The SOT-363-6 package offers space efficiency compared to larger footprints while maintaining adequate thermal performance for moderate current loads. Evaluate the 131 mOhm on-resistance against system power loss requirements to ensure compatibility with the 1.5 A continuous current rating.
This component belongs to Infineon's portfolio of small-signal MOSFETs designed for general-purpose switching. The BSV236 series specifically targets applications where compact form factors and high reliability are prioritized. As a single-channel device, it serves as a fundamental building block for load switching and protection circuits in constrained PCB layouts.
BSV236SPH6327